PANASONIC

PC30B-HS	

PC30B-H

PSX303M	

Plasma Source: ICP Plasma
Process Gas: 2Lines (standard) *Maximum 6 Lines (e.g. Chlorinated Gas, Fluoride Gas, Ar, O2, He )
Applicable Wafer: ø100 mm wafer with orientation flat (standard) *Option : ø50 mm, ø75 mm, ø50 mm (with O.F.)
Wafer Material: Silicon (standard) *Option : Quartz, GaAs, Sapphire
Machine Dimensions / Weight*1: W 1170 mm × D 2650 mm, H 2100 mm / 1900 kg (Main body only)
Power Source*2: Single phase AC 200V, 6 kVA and Three-phase AC 200V, 15 kVA (Main body only)
Dry Air: 0.49 M Pa to 0.54 M Pa, 40 L / min [A.N.R.]
N 2Source: 0.5 M Pa to 0.7 M Pa, 50 L / min

E600L

E725SC

E600 RIE, poly, nitride, oxide, single-chamber system.

E600

PSX303

Plasma Cleaner’s parallel plate chamber technology delivers superior etch uniformity over conventional batch systems. Experience surface cleaning before wirebond or flip-chip attach and surface activation and improved underfill wettability and mold encapsulation.

PSX307

E3000 metal etch (RIE), three chambers, etch, passivation, and dry strip.

E3000

HRe- etch system, low-pressure, high-density plasma source, magnetic confinement.

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