説明

193 nm DUV SCANNER(ARF)

構成

Valid ATP-document X1400E 1: Software release Twinscan Sw rel. 4.1.0 Power 400 Volt Wafer size 300 mm Wafer type Flat Laser MODEL CYMER XLA 160+/165 (45W) Laser type Cymer Laser OIU/Reticle-/Waf.aux.port Left Configuration Machine Location Customer-site MES machine type XT1400E FOUP mechan. door sensor No PPD IRIS (CSR) No CSR's for XT1400E various CSR 8004 CSR: AT Multilingual UI No Pellicle Safeguard (CSR) No CSR: LS M2M P2P No WH Carrier Interface 25 Wafer Open Cassette kit Wafer Track Interface TEL Cleantrack Lithius/200 Mark sensor (WH opt.pre-align) Yes Integrated Reticle Library Yes IRIS-6 Inch Reticles Twinscan ATASF ASF: IRIS-XT with PPD2_1 Reticle CIDRW (Tag Reader) No FOUP Lockout system No Second Laser paddle Yes ASF: MDL View CUST Site View 24 char Reticle Barcode Reader Yes Reorder Lot Service No Universal Prealignment No Recipe Creator Recipe Creator "Light" Automated Reticle Transport No WH PEP option (XT1400E), 200mm PEP-Upgraded tpt 200mm, 180wph EFESE No Proximity matching (CSR!) Yes (check additional text) AGILE No CSR: L1L7 Type_1 No ASF: LS Area Extension No Chemical Sampling ports No ExpoSure Yes ASF: LS Spot Coverage Yes Aerial-P / Polarization No BAM: Bandwidth Analysis Module No InformPro/SystemPerf.Ind.Focus No Equipment Constants No Image Tuner No 2D Barcode Reader No ASF: Echuck Flatness Qualific. No Wait Watcher No Reticle Streaming Yes (Reticle Streaming) CSR: Use UIP Ranges No Gridmapper Yes (LCP needed @ Fab) SpotLess Yes (NOT XT:1700Fi, XT:19x0xi) Chuck Dedication Yes Active Contrast Control No TOP PACKAGES Standard (TOP 2) ASF: Enh TPT Reticle Align Ext Yes ASF: Intel XT:1400E/F No 2DE Grid Calibration Yes Gas Life Extension GLX YES (purchased) Dosemapper Standard (LCP needed @Fab) CCD Option No Sourcing Level LPA Local Sourcing Standard Specification Performance for ASML XT1400E:- CATEGORY ITEMS SPEC FULL ACCEPTANCE TEST XT1400E 1. DynamicPerformance 1.1 MA X & Y (mean+3sig) [nm] ≤ 1.7 1.2 MSD X& Y (max of mean per field) [nm] ≤ 6.50 2 Overlay Performance 2.1 Stage repeatability [nm] ≤ 4.0 2.2 Single machine overlay (Setting 1, chuck A to chuck B) nm ≤ 8 3. Productivity 3.1 Wafer throughput: 125 exposures, 30mJ/cm2 16x32mm(dose30mJ/cm2),Setting1[w/h] ≥ 122 3.3 Reticle exchange time setting 1 --> setting 2 [s] ≤ 13 3.4 Lot overhead (incl. Reticle Exchange) setting 1 --> setting 2 [s] ≤ 13 4. Intensity 4.1Illumination intensity,11 scans in 26mm Setting 1[mW/cm2] ≥ 2260* 5. Projection Lens 5.1 RMS Z5-Z37 [nm] ≤ 1.7 5.2 RMS spherical [nm] ≤ 1.0 5.3 RMS coma [nm] ≤ 0.9 5.4 RMS astigmatism [nm] ≤ 0.9 5.5 RMS 3-foil [nm] ≤ 0.9 5.6 Non correctable error after correction for reticle error Setting1[nm] ≤ 7.0 5.7 Image plane deviation at 65nm, Setting 1 [nm] ≤ 43 5.8 Astigmatism at 65nm, Setting 1 [nm] ≤ 25 5.9 Long range straylight [SAMOS %] ≤ 0.9 5.10 Short range straylight [SAMOS %] ≤ 1.2 6. Dose control 5.1 Dose system performance, Setting 1 [%] ≤ 1.2 5.2 Integrated slit uniformity, Setting 1 [%] ≤ 0.30 5.3 Integrated scan uniformity, Setting 1 [%] ≤ 0.2 5.4 Dose reproducibility [%] ≤ 0.25 5.5 Dose accuracy, setting1 [%] ± 1.0 5.6 Dose stability, 3day [%] ≤ 0.5 6. Pupil Verification 6.1 Ellipticity, Setting1 [|mean|] ≤ 2.0 6.2 Sigma variation, Setting1 [range] ≤ 0.010 7. Focus and Leveling 7.1 Wafer map repeatability (99.7%) [nm] ≤ 10 7.2 Leveling verification Chuck to chuck focus difference [nm] ≤ 10 Full focus uniformity [nm] ≤ 50

OEMモデルの説明

The XT:400E is an ultra-high-throughput, mainstream i-line scanner for 300-mm wafers. Delivering feature sizes down to 350nm, it is specifically aimed at fabrication of non-critical layers and, with this in mind, has been designed to lower the overall Cost-ofOwnership (CoO).