Synapse™ V is a 300mm wafer bonder/debonder system which enable temporary bonding or debonding process efficiently. As the continuation of Moore’s law is becoming more and more challenging, 3D-IC with through-silicon via (TSV) interconnects secure a firm position in the field of advanced semiconductor, attracting attention as a means to improve semiconductor performance.  Synapse™ V is a temporary wafer bonding system, which allows two wafers to be bonded together by using various adhesives. The system consists of material coating, baking, and bonding functions to realize integrated wafer bonding processes in a single tool. Uniquely developed wafer alignment unit and wafer bonding module provide the highest level of Total Thickness Variation (TTV) and bonding accuracy.

Temporary bonder system, capable of coating, baking and bonding in one tool.

TEL / TOKYO ELECTRON

SYNAPSE V

SYNAPSE

Synapse™ Z Plus, these systems are 300mm wafer bonder/debonder system which enable temporary bonding or debonding process efficiently. As the continuation of Moore’s law is becoming more and more challenging, 3D-IC with through-silicon via (TSV) interconnects secure a firm position in the field of advanced semiconductor, attracting attention as a means to improve semiconductor performance.

Synapse™ Z Plus, equipped with wafer debonding, device and carrier wafer cleaning function, makes it possible to complete complicated wafer debonding process after TSV process with one system. The system has newly developed special function that provides stabilize transfer and safe process operation of ultra-thin wafers less than about 50um thickness.



SYNAPSE Z Plus

Synapse™ Si adopts a compact design that halves the footprint, and also realized high throughput at the same time. By extending additional block, productivity per footprint can be further improved.

Synapse™ Si is a successor model of Synapse™ S, a wafer fusion bonding equipment widely used in 300mm CMOS image sensor mass production lines. Compared to conventional Synapse™ S, alignment accuracy has been improved. Improved throughput based on Litius Z frame, bonding of silicon oxide and Cu capable, 3 alpha per 100nm accuracy.


SYNAPSE Si

Synapse™ S, a wafer fusion bonding equipment widely used in 300mm CMOS image sensor mass production lines.
Original wafer bonder, built on the Lithius frame.

TEL / TOKYO ELECTRON

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SYNAPSE V

SYNAPSE

SYNAPSE Z Plus

SYNAPSE Si

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