説明
説明なし構成
Tool has been de-installed and is stored in an off-site warehouse. [Platen1]30inch platen (max133rpm)4inch pad conditioner (DDF3type,30-120rpm)slurry line1:D4505 (max400ml/min) (tube pump)torque end point system [Platen2]30inch platen (max133rpm)4inch pad conditioner (DDF3type,30-120rpm)slurry line1:D4505 (max400ml/min) (tube pump)torque end point system [Platen3]30inch platen (max133rpm)4inch pad conditioner (DDF3type,30-120rpm)slurry line1:CES333 (max400ml/min) (tube pump)slurry line2:PL-6501 (max400ml/min) (tube pump)torque end point system [Head1]membrane press head (3zone 0-15psi)head spindle (max200rpm) [Head2]membrane press head (3zone 0-15psi)head spindle (max200rpm) [Head3]membrane press head (3zone 0-15psi)head spindle (max200rpm) [Head4]membrane press head (3zone 0-15psi)head spindle (max200rpm) [Cleaner1]megasonic 2roller+1idlercirculating DIW flow (2.0l/min)control temp (20-50deg)megasonic power (950kHz,600w)wafer rotation speed (6rpm) [Cleaner2]2brush 3roller+1idlerrotation speed (brush:max700rpm) (wafer:max50rpm)DIW delivery (DIW:2000ml/min)chemical delivery (NH4OH:2000ml/min)brush rinse (DIW:1000-4000ml/min) [Cleaner3]2brush 3roller+1idlerrotation speed (brush:max700rpm) (wafer:max50rpm)DIW delivery (DIW:2000ml/min)chemical delivery (FPM:2000ml/min)brush rinse (DIW:1000-4000ml/min) [Dryer]spin rinse dryer (max:2500rpm)ramp heater (1000w infrared heater ) [load port]3load port INLINE METROLOGY NOVA3060 IS NOT INCLUDED IN TOOL.Missing or damaged parts: Not reported.OEMモデルの説明
The Applied Reflexion CMP system is Applied Materials' 300mm CMP platform delivering innovation and productivity for 100nm and beyond. Based on the production-proven Applied Mirra Mesa CMP architecture, the Applied Reflexion system offers 300mm processing capabilities for oxide, STI, polysilicon, tungsten, and copper applications. Titan Head technology delivers excellent dishing and erosion performance with better repeatability. The system's FullScan endpoint system enables superior process results by scanning the entire wafer. Applied Reflexion's cleaner offers a two-stage brush scrub with single-wafer megasonics in vertical orientation to minimize footprint. Its space efficient design also features factory automation and advanced process control with integrated film thickness metrology and particle monitoring options, as well as a dual wafer robot which increases tool throughput for thin films.ドキュメント
ドキュメントなし
APPLIED MATERIALS (AMAT)
REFLEXION
検証済み
カテゴリ
CMP
主なアイテムの詳細
状態:
Used
稼働ステータス:
不明
製品ID:
20962
ウェーハサイズ:
12"/300mm
ヴィンテージ:
2004
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
同様のリスト
すべて表示APPLIED MATERIALS (AMAT)
REFLEXION
検証済み
カテゴリ
CMP
最終検証: 60日以上前
主なアイテムの詳細
状態:
Used
稼働ステータス:
不明
製品ID:
20962
ウェーハサイズ:
12"/300mm
ヴィンテージ:
2004
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
説明
説明なし構成
Tool has been de-installed and is stored in an off-site warehouse. [Platen1]30inch platen (max133rpm)4inch pad conditioner (DDF3type,30-120rpm)slurry line1:D4505 (max400ml/min) (tube pump)torque end point system [Platen2]30inch platen (max133rpm)4inch pad conditioner (DDF3type,30-120rpm)slurry line1:D4505 (max400ml/min) (tube pump)torque end point system [Platen3]30inch platen (max133rpm)4inch pad conditioner (DDF3type,30-120rpm)slurry line1:CES333 (max400ml/min) (tube pump)slurry line2:PL-6501 (max400ml/min) (tube pump)torque end point system [Head1]membrane press head (3zone 0-15psi)head spindle (max200rpm) [Head2]membrane press head (3zone 0-15psi)head spindle (max200rpm) [Head3]membrane press head (3zone 0-15psi)head spindle (max200rpm) [Head4]membrane press head (3zone 0-15psi)head spindle (max200rpm) [Cleaner1]megasonic 2roller+1idlercirculating DIW flow (2.0l/min)control temp (20-50deg)megasonic power (950kHz,600w)wafer rotation speed (6rpm) [Cleaner2]2brush 3roller+1idlerrotation speed (brush:max700rpm) (wafer:max50rpm)DIW delivery (DIW:2000ml/min)chemical delivery (NH4OH:2000ml/min)brush rinse (DIW:1000-4000ml/min) [Cleaner3]2brush 3roller+1idlerrotation speed (brush:max700rpm) (wafer:max50rpm)DIW delivery (DIW:2000ml/min)chemical delivery (FPM:2000ml/min)brush rinse (DIW:1000-4000ml/min) [Dryer]spin rinse dryer (max:2500rpm)ramp heater (1000w infrared heater ) [load port]3load port INLINE METROLOGY NOVA3060 IS NOT INCLUDED IN TOOL.Missing or damaged parts: Not reported.OEMモデルの説明
The Applied Reflexion CMP system is Applied Materials' 300mm CMP platform delivering innovation and productivity for 100nm and beyond. Based on the production-proven Applied Mirra Mesa CMP architecture, the Applied Reflexion system offers 300mm processing capabilities for oxide, STI, polysilicon, tungsten, and copper applications. Titan Head technology delivers excellent dishing and erosion performance with better repeatability. The system's FullScan endpoint system enables superior process results by scanning the entire wafer. Applied Reflexion's cleaner offers a two-stage brush scrub with single-wafer megasonics in vertical orientation to minimize footprint. Its space efficient design also features factory automation and advanced process control with integrated film thickness metrology and particle monitoring options, as well as a dual wafer robot which increases tool throughput for thin films.ドキュメント
ドキュメントなし