概要（Overview）

The fourth generation Applied SEMVision is the fastest and most advanced line of SEM defect review and analysis systems for 45nm manufacturing and beyond. Building on 10 years of technical innovation and leadership, SEMVision G4 products (G4, G4 HP, and G4 MAX) offers the most productive and cost-effective path to in-line defect resolution. G4 SEMVision G4 delivers high-throughput, in-line defect review and analysis with high resolution and state-of the-art algorithms for production and engineering applications. Imaging capabilities include enhanced MPS with five detectors for simultaneous imaging of material and topographic perspectives; voltage contrast and high aspect ratio (HAR) imaging; and a secondary electron spectrometer for bottom layer defects. Comprehensive defect analysis on the wafer's edge, bevel, and apex addresses critical defect migration issues associated with 32nm immersion lithography. EDXtreme [advanced automatic EDX (energy dispersive x-ray)] enables fast, full-spectrum acquisition material analysis of defects as small as sub-50nm particles. SEM column's rotatation and tilt flexibility up to 45° relative to the wafer makes available complete 3D data for superior defect visualization and classification. G4 HP SEMVision G4 HP sets the industry standard for productivity and cost of ownership with record sensitivity for unpatterned wafer review. Capable of automatically imaging 30nm defects at high throughput, the system supplements the G4's imaging capabilities with Automatic Process Inspection (API) and Quantified Process Monitoring (QPM) that combine high-resolution SEM imaging with tailored algorithms for automatic detection and monitoring of systematic defects. G4 MAX SEMVision G4 MAX is the sole defect review tool to offer automated in-line Wavelength Dispersive X-ray (WDX) material analysis for definitive identification of all existing elements. Combining the extreme energy resolution of WDX with the full-spectrum coverage and high throughput of EDXtreme, G4 MAX enables robust analysis of defects as small as 50nm at record cycle times.