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Under high vacuum conditions, plasma is generated by RF high-frequency discharge, and under the action of bias voltage, specific materials are removed through physical and chemical effects. Etching materials: metal, GaN, In P, SiO2, Si, Polymide and other materials. Load-lock type, fully automatic control, patented ISM electrode, high uniformity, good stability, simple structure and easy maintenance.
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検査、保証、鑑定、ロジスティクス