説明
Chamber A MERIE RIE w/endpoint 100mm Chamber B MERIE RIE w/endpoint 100mm Chamber D CVD SiO2, SiON, SiN 100mm構成
Chamber A: -Needs a turbo -Needs an etch kit -Assembly Chamber Bravo: -Same as A Chamber D: -Vacuum leakOEMモデルの説明
The AMAT P5000 Etch is a magnetically enhanced reactive ion etching system (MERIE) with two functional process chambers (Chambers B & C). P5000 Chamber B is primarily used for etching silicon based dielectrics (silicon dioxide, silcon nitride, etc.) and some carbon based compounds (resist, poly imide, etc) while chamber C is mainly used for silicon etching with high selectivity to underlying dielectric such as silicon dioxide. The system can process only 4" wafers. Pieces have to be attached to a 4" wafer. Though the process chamber processes one wafer at a time, up to 25 wafers can be loaded per batch.ドキュメント
ドキュメントなし
APPLIED MATERIALS (AMAT)
P5000 ETCH
検証済み
カテゴリ
Etch/Asher
最終検証： 60日以上前
主なアイテムの詳細
状態：
Used
稼働ステータス:
不明
製品ID：
87010
ウェーハサイズ：
4"/100mm, 6"/150mm
ヴィンテージ：
不明
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
同様のリスト
すべて表示
APPLIED MATERIALS (AMAT)
P5000 ETCH
カテゴリ
Etch/Asher
最終検証： 60日以上前
主なアイテムの詳細
状態：
Used
稼働ステータス:
不明
製品ID：
87010
ウェーハサイズ：
4"/100mm, 6"/150mm
ヴィンテージ：
不明
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
説明
Chamber A MERIE RIE w/endpoint 100mm Chamber B MERIE RIE w/endpoint 100mm Chamber D CVD SiO2, SiON, SiN 100mm構成
Chamber A: -Needs a turbo -Needs an etch kit -Assembly Chamber Bravo: -Same as A Chamber D: -Vacuum leakOEMモデルの説明
The AMAT P5000 Etch is a magnetically enhanced reactive ion etching system (MERIE) with two functional process chambers (Chambers B & C). P5000 Chamber B is primarily used for etching silicon based dielectrics (silicon dioxide, silcon nitride, etc.) and some carbon based compounds (resist, poly imide, etc) while chamber C is mainly used for silicon etching with high selectivity to underlying dielectric such as silicon dioxide. The system can process only 4" wafers. Pieces have to be attached to a 4" wafer. Though the process chamber processes one wafer at a time, up to 25 wafers can be loaded per batch.ドキュメント
ドキュメントなし