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説明
IMP Warehoused since the year 2023構成
構成なしOEMモデルの説明
The SEN Corporation / Sumitomo NV-GSD-HC3 is a high current ion implantation system designed for the efficient and high-volume production of devices such as DRAMs using 300 mm wafers. This model excels in ultra-low energy applications, offering implantation energy as low as 0.2 keV up to 80 keV. It ensures high current with minimal energy contamination through a deceleration mechanism, making it suitable for delicate processes down to 0.2 keV. The system features a high-performance, long-life ion source (ELS) for consistent performance. It provides high accuracy of implantation with excellent beam quality, minimizing metal contamination and cross-contamination using advanced technologies like the VSD (Virtual Slit Disk) and TSDF (Triple Surface Disk Faraday). Additionally, a plasma shower system minimizes charge buildup, enhancing process stability.ドキュメント
ドキュメントなし
カテゴリ
High Current
最終検証： 60日以上前
主なアイテムの詳細
状態：
Used
稼働ステータス:
不明
製品ID：
117841
ウェーハサイズ：
12"/300mm
ヴィンテージ：
2002
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
SEN CORPORATION / SUMITOMO
NV GSD HC3
カテゴリ
High Current
最終検証： 60日以上前
主なアイテムの詳細
状態：
Used
稼働ステータス:
不明
製品ID：
117841
ウェーハサイズ：
12"/300mm
ヴィンテージ：
2002
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
説明
IMP Warehoused since the year 2023構成
構成なしOEMモデルの説明
The SEN Corporation / Sumitomo NV-GSD-HC3 is a high current ion implantation system designed for the efficient and high-volume production of devices such as DRAMs using 300 mm wafers. This model excels in ultra-low energy applications, offering implantation energy as low as 0.2 keV up to 80 keV. It ensures high current with minimal energy contamination through a deceleration mechanism, making it suitable for delicate processes down to 0.2 keV. The system features a high-performance, long-life ion source (ELS) for consistent performance. It provides high accuracy of implantation with excellent beam quality, minimizing metal contamination and cross-contamination using advanced technologies like the VSD (Virtual Slit Disk) and TSDF (Triple Surface Disk Faraday). Additionally, a plasma shower system minimizes charge buildup, enhancing process stability.ドキュメント
ドキュメントなし