The GSD/HE is a high-energy implant device that is designed to maximize productivity and flexibility in a wide range of implant applications, including 200mm high energy implantation for logic and memory chips. With an energy range from 10keV to over 3MeV, it can perform all retrograde wells and channel implants in a chain. The device features exceptional beam purity, thanks to its patented linear acceleration technology, and is built on a production-proven GSD wafer-handling architecture. It is also easy to access and maintain, which helps to increase productivity and reduce the cost of ownership. Additionally, the GSD/HE can be used as a backup for medium current implantation, further increasing ROI.

Designs, manufactures and services ion implantation and other processing equipment used in the fabrication of semiconductor chips.

AXCELIS

GSD HE

The SEN CORPORATION / SUMITOMO NV-GSD HE3 is an ion implanter that uses high-energy and was developed by SEN Corporation. It is an improved version of the NV-GSD-HE3, with the addition of six RF resonators to the beam line. The system is configured for 300mm wafers and can accelerate boron ions up to 2 MeV with a beam current of 0.75 mA, as well as phosphorus ions up to 4.4 MeV with a beam current of 0.35 mA. Its primary use is in the image sensor market, where it increases the depth of CCD photodiodes in the wafer surface, allowing for higher pixel density in image sensors. The system also features a state-of-the-art beam profile controller for optimizing implant damage and micro-uniformity. 

In 2000, Eaton spun off Axcelis as a separate company, and Axcelis inherited Eaton’s 50-percent ownership stake in the joint venture. SEN, licenses technology from Axcelis for ion implantation, has exclusive rights to the territory of Japan and is the leading producer of ion implantation equipment in Japan. In 2009, the merger between Axcelis Technologies and Sumitomo Heavy Industries dissolved—Sumitomo became the sole parent company, and with this, the company name changed to SEN Corporation. 

SEN CORPORATION / SUMITOMO

NV GSD HE3

The Eaton Nova NV-10-160 is a high energy Ion Implanter. Bare silicon wafers were implanted in an Eaton Nova 10-160 ion implanter at 60 keV energy with doses in the range 1-5∙1015cm-2 and annealed at 600°C for 20 min. 

NV 10 160

The VIISta HE is a single-wafer high energy implanter by Varian Semiconductor. It is popular for high volume DRAM production and serves a range of semiconductor implant applications. It features True Zero degree implant, low contamination, and outstanding process accuracy. The True Zero capability provides an advantage for increased device packing density in high-performance devices. The VIISta HE offers excellent productivity, uniformity, angle control, and medium current back-up flexibility. It covers retrograde well, triple well, buried layers, and pocket applications.

November 10, 2011 – Applied Materials, Inc. announced the successful completion of its acquisition of Varian Semiconductor Equipment Associates, Inc. 
Varian is the leading supplier of ion implantation equipment used by chip makers and has been applying this technology to crystalline silicon wafers for photovoltaic panels. Varian will operate as a business unit of Applied's Silicon Systems Group.

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GSD HE

NV GSD HE3

NV 10 160

VIISta HE