The Iris C1 system combines a proprietary spectroscopic ellipsometry solution from the Atlas family with Onto Innovation’s industry leading AI-Diffract™ OCD analysis software, enabling high precision control of every critical semiconductor process step. The system incorporates a dual-arm robot, high-precision stage and high-speed focus system. The system also features advanced pattern recognition, improved thickness reproducibility and throughput. 

ONTO / NANOMETRICS / ACCENT / BIO-RAD

IRIS C1

Based on a common HBLS optical design derived from our seventh generation Atlas platform and best-in-class deep ultraviolet (DUV) optics, the Iris R1 system offers maximum sensitivity and accuracy to CMP process excursions and enables device makers to establish APC control solutions with high-accuracy feedback. With SpectraProbe™ and NanoDiffract® analysis solutions enabling direct measurements within device and active areas, users are now able to monitor minor process excursions and optimize their processes for higher yields.

IRIS R1

The NanoOCD  9000 is a 300  millimeter-based  system that  incorporates  the newly developed OCD technology for the measurement of critical  dimension on semiconductor  wafers,  and is designed for integration  into  semiconductor wafer  processing  equipment.  The system  can be used in  several  critical processing steps including photolithography and etch.

NanoOCD  9000

NANOLINE 50-2

The Nanometrics FLX is a flexible metrology system that offers cost-efficiency and high throughput for 300 mm standalone metrology. It is based on Nanometrics’ proven integrated metrology solutions and can support up to four integrated metrology modules simultaneously. The tool can mix-and-match any combination of modules to form a complete metrology solution for lithography, CMP, etch, and CVD/deposition processes. This capability accelerates process development through parallel development of integrated metrology solutions. The system offers industry-leading throughput of 250-500 wafers fueled by dual multi-axis wafer-handling robots.

M6100UV-L6

Dopant concentration and layer thickness, with faster wafer handling.

STRATUS

Vertical alignment of device structures extendible to 90 nanometers on 200mm wafers.

Q200

NANOLINE V

Lattice strain and structure, composition and layer thickness for gallium arsenide, indium phosphide and silicon germanium materials.

Vektor-DCD

M6100UV

The NanoOCD 9010M was  introduced in the third quarter of 2003,  and the first optical critical  dimension (OCD)  integrated  metrology tool for   masks   and   reticles.    The   NanoOCD   9010M   utilizes   our production-proven OCD metrology, and enables non-destructive, real-time measurement  and  profiling  of  critical  features on  photomasks  and reticles  without the limitations and drawbacks  associated with CD-SEM metrology.  Current  CD-SEM  technology  appears  to  be  reaching  its theoretical limits for making critical dimension  measurements on these substrates.  Photoresist-on-chrome-on-glass  features found on reticles and  masks  suffer  severe  charging  during  CD-SEM  metrology  making critical dimension  measurements  impossible.  OCD is a non-destructive technology   that  provides   information  not  available  from  CD-SEM measurements.


NanoOCD 9010M

The recently introduced Nanometrics Orion, Advanced Overlay Control System provides enhanced measurement performance and higher wafer throughput and replaces the original Metra line of products. The system is based on the highly successful Atlas platform and offers high throughput in excess of 180 wafers per hour. Orion utilizes a proprietary optical system to provide low total measurement uncertainty (TMU), enabling 1 nanometer, 3-sigma precision in overlay control applications. Orion’s aerial image metrology with proprietary digital image folding tolerates wide process variations and reduces the possibility of erroneous data. Both attributes are crucial elements in attaining high yields in 200mm and 300mm volume production.

ORION

The Q240AT incorporates the same measurement technology as the Caliper, and delivers the same advanced measurement capabilities for 200mm wafer sizes.


Q240AT

Illumina is a compact manual FT-IR system that belongs to a new class of innovative instruments for optical, non-contact measurements of epi wafers. With over 25 years of experience, it provides accurate and repeatable characterization of multi-layer, compound semiconductor wafer parameters such as epi thickness and doping concentration. This critically affects the performance of optoelectronic devices such as P-I-N and avalanche photodiodes, IR lasers, VCSELs, LEDs, and waveguides, allowing for higher yields and lower costs. Using state-of-the-art Fourier Transform Infrared technology and model-based analysis, epi thickness maps can be obtained in minutes on both test and product wafers. An optional small spot size minimizes edge exclusion.

ILLUMINA

Imperia is a photoluminescence (“PL”) full wafer imaging and mapping system designed for high-volume compound semiconductor metrology applications including power control and photonics applications adding significant inspection and substrate metrology capability to the established PL fleet.

IMPERIA

VERTEX SM-230

Q200I 

Electron mobility in very high resistivity films or at extremely low current levels.

HL5580

NANOLINE CDR III

The NanoOCD 9020, a 200 millimeter-based system that incorporates our newly developed edge-gripping vacuum wafer stage and OCD technology for the measurement of critical dimensions on semiconductor wafers. The system is designed for integration into the vacuum chamber of semiconductor wafer etch processing equipment.

NanoOCD 9020

Lattice strain and structure, composition and layer thickness for gallium nitride materials.

Vektor-GaN

The Unifire system enables users to measure multiple parameters at any given process step in the advanced packaging process flow for critical dimension, overlay, and topography applications.

UNIFIRE

CDS200 is a 200mm Critical Dimension Control System that offers fast and non-destructive critical dimension metrology. It is designed for use in R&D, production, and quality control environments, providing improved process control and high throughput. The system is fully automated and can accurately measure critical dimensions as small as 70nm, while also determining cross-sectional profile and layer thickness. This makes it an ideal tool for ensuring precise measurements and process control in a variety of applications.

CDS200

The  NanoOCD  9300  stand-alone,  automated  metrology  system is an optical critical  dimension  measurement system that provides direct recipe transfer to Nanometrics Integrated Metrology and stand-alone systems. This system can also include a  mini-environment  enclosure and wafer load ports  compatible with industry standards. 

NanoOCD 9300

The Iris T1 is a spectroscopic ellipsometer system that provides accurate, repeatable in-line thickness and optical constant measurements of single and multi-layer dielectric films for fab-wide applications. Built on the same field-proven Atlas platform, the Iris T1 system leverages the most recent advances in optics and algorithms, making it best-in-class for performance and cost-of-ownership. 

IRIS T1

The DiVA D210 is a dual-channel synchronous pulse source measurement unit from Accent Optical Technologies. It provides pulse widths down to 100ns and a dc measurement capability. The output voltages range from -10V to +10V with a maximum current of 500mA. It supports FETs, HEMTs, NPN and PNP bipolar/HBT and diodes, and has an intuitive Windows® interface. It is a compact single box solution with high throughput and can be controlled from 3rd party programs. It also has I(V) parameter fitting for HEMT and FET models.

DiVA D210

NANOLINE 50

Lattice strain and structure, composition and layer thickness for strained silicon and SOI materials.

Vektor-SSi

Vertex is the latest addition to the RPM family and is designed to deliver industry-leading accuracy, repeatability, and tool-to-tool matching. It is a PL Mapping System with Power Density Control that brings the PL measurement process under control, ensuring that your epitaxial process stays firmly under control. Vertex provides accurate, precise, and repeatable PL metrology across the entire wavelength range, including high-Al content AlGaN alloys for GaN FET’s and UV lasers to the Antimonides out in the MIR and everything in between. It offers a catalog of more than 15 standard lasers and the ability to fiber-feed a virtually unlimited array of sources. The monochromator can be fitted with up to three gratings and two array detectors, and every optical component is selected under computer control. Vertex also contains its own built-in spectral source for monochromator calibration. The system can accommodate up to 4 internally mounted lasers, two of which feature a continuously-variable power control with feedback loop. Large lasers can be fiber-connected, and for film thickness measurements, the system can be fitted with a white light source. The Vertex software also includes a Fourier Transform facility for data interpretation.

VerteX

The NanoOCD/DUV 9010b is a SEMI BOLTS compatible, 300 millimeter based system that incorporates all the features of the NanoOCD/DUV 9010. By conforming to the industry standard BOLTS mounting system, the NanoOCD/DUV 9010b is interchangeable with industry conforming load ports for simplified mechanical integration.

9010b

UNIFIRE 7900-L

The SiPHER is a fully automated photoluminescence metrology system for the detection and mapping of 300mm substrate defects and metallic contamination. SiPHER detects and quantifies near surface and bulk metallic contamination in both bulk silicon and silicon epitaxial layers.

SiPHER

NANOLINE 50-2C

VERTEX-SM-110	

The Trajectory T³ is a cutting-edge metrology module developed by Nanometrics for monitoring and controlling critical processes in semiconductor fabs worldwide. It has been approved for integration by leading process tool manufacturers and has set new standards for speed, reliability, and cost. With its robust large area optical collectors, simple yet powerful spectral detectors, and a MTBF of over 10,000 hours, the Trajectory T³ minimizes cost while maximizing performance. Capable of processing over 250 wafers per hour, it can measure every process wafer even on the fastest process tools. By enabling process tools to measure thicknesses inside the tool and inside the wafer’s patterned devices, the Trajectory T³ delivers unparalleled advantages in speed, reliability, and cost. It is truly changing the game in integrated metrology.

6" Fab For Sale from Moov - Click Here to Learn More

6" Fab For Sale from Moov - Click Here to Learn More

6" Fab For Sale from Moov - Click Here to Learn More

ONTO / NANOMETRICS / ACCENT / BIO-RAD

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