説明
説明なし構成
Tool is currently still in production. Tool is in good condition. Inspect to confirm configuration and condition. <b>C2 Dual Sequel Shrink</b> Electrical Requirements: 208 VAC, 3 phase, 5-wire Wafer Size (inches) : 8 Wafer Type : Notch Stand Alone Install RF Generator Rack SSD Serial Numbers: Module A : DCVD Serial Number : 01-8-C26291 Module B : DCV2 Serial Number : 01-12-C26315 DLCM Serial Number : 02-15-C26440 <b>DLCM</b> Signal Lamp Tower IOC Version : 4.2 Integrated SMIF SMIF Loader Make/Model : Asyst SMIF, LPI 2200 MAG 7 Robot Type SECS / GEMS <b>Sequel Chambers </b> Process Type : AHM Digital Dynamics IOC Heated Valves Gate Valve Mfg & Model : Gate Valve Assy, Heated 4 Inch. Novellus RF Match Type : A.E. End Point Detector RF Generators Advanced Energy RFG5500 Advanced Energy PDX1400 <b>Pumps </b> Deposition Chamber Pump: Alcatel ADS 1202P Load Lock Pump: Alcatel A100L Transfer Chamber Pump: Alcatel A100L <b>Gas Box Configuration</b> Gas Line # Gas Flow (sccm) MFC Mfgr. MFC Model 1 SiH4 750 Horiba Z512 2 N2 10000 Unit UFC1661 3 C2H2 5000 Horiba Z512 4 He 10000 Unit UFC1661 5 NH3 8000 Unit UFC1661 6 He 10000 Unit UFC1661 7 O2 15000 Unit UFC1661 8 NF3 2000 Unit UFC1661 9 N2O 20000 Unit UFC1661 10 N2 15000 Unit UFC1661OEMモデルの説明
The NOVELLUS CONCEPT TWO DUAL SEQUEL is a system that uses reactive ion-beam deposition to deposit thick films onto wafers. It has two process chambers that can provide the throughput power of twelve stations, resulting in dramatic improvements in productivity for these types of films. It is designed for high throughput deposition of thick films, such as layers before CMP (chemical-mechanical planarization), and dual layer passivation films. It also offers dual-beam operation for increased wafer-to-wafer uniformity and higher deposition rates, as well as process control capabilities and versatile materials handling for a wide range of applications.ドキュメント
ドキュメントなし
LAM RESEARCH / NOVELLUS
CONCEPT TWO "C2" DUAL SEQUEL
検証済み
カテゴリ
MOCVD
主なアイテムの詳細
状態：
Used
稼働ステータス:
不明
製品ID：
18871
ウェーハサイズ：
8"/200mm
ヴィンテージ：
2010
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
同様のリスト
すべて表示同様のリストが見つかりません
LAM RESEARCH / NOVELLUS
CONCEPT TWO "C2" DUAL SEQUEL
検証済み
カテゴリ
MOCVD
最終検証： 60日以上前
主なアイテムの詳細
状態：
Used
稼働ステータス:
不明
製品ID：
18871
ウェーハサイズ：
8"/200mm
ヴィンテージ：
2010
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
説明
説明なし構成
Tool is currently still in production. Tool is in good condition. Inspect to confirm configuration and condition. <b>C2 Dual Sequel Shrink</b> Electrical Requirements: 208 VAC, 3 phase, 5-wire Wafer Size (inches) : 8 Wafer Type : Notch Stand Alone Install RF Generator Rack SSD Serial Numbers: Module A : DCVD Serial Number : 01-8-C26291 Module B : DCV2 Serial Number : 01-12-C26315 DLCM Serial Number : 02-15-C26440 <b>DLCM</b> Signal Lamp Tower IOC Version : 4.2 Integrated SMIF SMIF Loader Make/Model : Asyst SMIF, LPI 2200 MAG 7 Robot Type SECS / GEMS <b>Sequel Chambers </b> Process Type : AHM Digital Dynamics IOC Heated Valves Gate Valve Mfg & Model : Gate Valve Assy, Heated 4 Inch. Novellus RF Match Type : A.E. End Point Detector RF Generators Advanced Energy RFG5500 Advanced Energy PDX1400 <b>Pumps </b> Deposition Chamber Pump: Alcatel ADS 1202P Load Lock Pump: Alcatel A100L Transfer Chamber Pump: Alcatel A100L <b>Gas Box Configuration</b> Gas Line # Gas Flow (sccm) MFC Mfgr. MFC Model 1 SiH4 750 Horiba Z512 2 N2 10000 Unit UFC1661 3 C2H2 5000 Horiba Z512 4 He 10000 Unit UFC1661 5 NH3 8000 Unit UFC1661 6 He 10000 Unit UFC1661 7 O2 15000 Unit UFC1661 8 NF3 2000 Unit UFC1661 9 N2O 20000 Unit UFC1661 10 N2 15000 Unit UFC1661OEMモデルの説明
The NOVELLUS CONCEPT TWO DUAL SEQUEL is a system that uses reactive ion-beam deposition to deposit thick films onto wafers. It has two process chambers that can provide the throughput power of twelve stations, resulting in dramatic improvements in productivity for these types of films. It is designed for high throughput deposition of thick films, such as layers before CMP (chemical-mechanical planarization), and dual layer passivation films. It also offers dual-beam operation for increased wafer-to-wafer uniformity and higher deposition rates, as well as process control capabilities and versatile materials handling for a wide range of applications.ドキュメント
ドキュメントなし
同様のリスト
すべて表示同様のリストが見つかりません