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APPLIED MATERIALS (AMAT) PRODUCER GT PECVD
    説明
    PECVD (Chemical Vapor Deposition)
    構成
    構成なし
    OEMモデルの説明
    Applied Materials offers PECVD (Plasma-Enhanced Chemical Vapor Deposition) TEOS (tetraethyl orthosilicate) and silane-based oxide and nitride films for high-productivity blanket film applications for ≤90nm technology nodes. These films deliver excellent thickness uniformity, low particulates, and repeatable film stress which make them ideal solutions for liner and capping layers for passivation, thick pre-metal dielectric (PMD) capacitor layer, and inter-metal dielectric (IMD) applications. For 130nm and 90nm copper dual damascene schemes, the Producer PECVD system offers production-proven TEOS FSG (fluorinated silicate glass) as the low k dielectric (k=3.45) and Damascene Nitride as the etch-stop and copper barrier layer. Damascene Nitride provides a unique in-situ copper removal step to ensure excellent adhesion and improved device reliability. High etch selectivity to FSG and low hydrogen content make this film ideal as an etch-stop layer. The TEOS FSG film, which is deposited on top of Damascene Nitride, provides significantly higher device reliability and performance compared to silane-based FSG films due to its inherent fluorine stability and moisture resistance. The 3.45 k-value reduces capacitance versus USG (undoped silicate glass) and silane FSG films, thereby increasing device speed and lowering power consumption for devices. These PECVD processes run on the production-proven, high-throughput Applied Producer platform. With its innovative Twin Chamber architecture, the Producer platform enables simultaneous processing of up to six wafers for superior productivity and significant reduction in cost of ownership with high system reliability. Platform extendibility enables customers to leverage the Producer toolset for multiple process nodes.
    ドキュメント

    ドキュメントなし

    APPLIED MATERIALS (AMAT)

    PRODUCER GT PECVD

    verified-listing-icon

    検証済み

    カテゴリ
    PECVD

    最終検証: 20日前

    主なアイテムの詳細

    状態:

    Used


    稼働ステータス:

    不明


    製品ID:

    117884


    ウェーハサイズ:

    12"/300mm


    ヴィンテージ:

    不明


    Have Additional Questions?
    Logistics Support
    Available
    Money Back Guarantee
    Available
    Transaction Insured by Moov
    Available
    Refurbishment Services
    Available
    同様のリスト
    すべて表示
    APPLIED MATERIALS (AMAT) PRODUCER GT PECVD

    APPLIED MATERIALS (AMAT)

    PRODUCER GT PECVD

    PECVD
    ヴィンテージ: 2009状態: 中古
    最終確認60日以上前

    APPLIED MATERIALS (AMAT)

    PRODUCER GT PECVD

    verified-listing-icon
    検証済み
    カテゴリ
    PECVD
    最終検証: 20日前
    listing-photo-7ba165f081944a3fa4507547571be913-https://d2pkkbyngq3xpw.cloudfront.net/moov_media/3.0-assets/photo-coming-soon-small.png
    主なアイテムの詳細

    状態:

    Used


    稼働ステータス:

    不明


    製品ID:

    117884


    ウェーハサイズ:

    12"/300mm


    ヴィンテージ:

    不明


    Have Additional Questions?
    Logistics Support
    Available
    Money Back Guarantee
    Available
    Transaction Insured by Moov
    Available
    Refurbishment Services
    Available
    説明
    PECVD (Chemical Vapor Deposition)
    構成
    構成なし
    OEMモデルの説明
    Applied Materials offers PECVD (Plasma-Enhanced Chemical Vapor Deposition) TEOS (tetraethyl orthosilicate) and silane-based oxide and nitride films for high-productivity blanket film applications for ≤90nm technology nodes. These films deliver excellent thickness uniformity, low particulates, and repeatable film stress which make them ideal solutions for liner and capping layers for passivation, thick pre-metal dielectric (PMD) capacitor layer, and inter-metal dielectric (IMD) applications. For 130nm and 90nm copper dual damascene schemes, the Producer PECVD system offers production-proven TEOS FSG (fluorinated silicate glass) as the low k dielectric (k=3.45) and Damascene Nitride as the etch-stop and copper barrier layer. Damascene Nitride provides a unique in-situ copper removal step to ensure excellent adhesion and improved device reliability. High etch selectivity to FSG and low hydrogen content make this film ideal as an etch-stop layer. The TEOS FSG film, which is deposited on top of Damascene Nitride, provides significantly higher device reliability and performance compared to silane-based FSG films due to its inherent fluorine stability and moisture resistance. The 3.45 k-value reduces capacitance versus USG (undoped silicate glass) and silane FSG films, thereby increasing device speed and lowering power consumption for devices. These PECVD processes run on the production-proven, high-throughput Applied Producer platform. With its innovative Twin Chamber architecture, the Producer platform enables simultaneous processing of up to six wafers for superior productivity and significant reduction in cost of ownership with high system reliability. Platform extendibility enables customers to leverage the Producer toolset for multiple process nodes.
    ドキュメント

    ドキュメントなし

    同様のリスト
    すべて表示
    APPLIED MATERIALS (AMAT) PRODUCER GT PECVD

    APPLIED MATERIALS (AMAT)

    PRODUCER GT PECVD

    PECVDヴィンテージ: 2009状態: 中古最終検証:60日以上前
    APPLIED MATERIALS (AMAT) PRODUCER GT PECVD

    APPLIED MATERIALS (AMAT)

    PRODUCER GT PECVD

    PECVDヴィンテージ: 0状態: 中古最終検証:20日前
    APPLIED MATERIALS (AMAT) PRODUCER GT PECVD

    APPLIED MATERIALS (AMAT)

    PRODUCER GT PECVD

    PECVDヴィンテージ: 0状態: 中古最終検証:20日前