FOUR DIMENSIONS

CVMap3092A

Wafer CV mapper - Mercury Probe

1.2 System Specifications
    1. Wafer size: 1-inch to 12-inch wafers typical (8-inch for 92A/92B), sample size can be as small as 5mm x 5mm
    2. Polar or Cartesian mapping up to 49 sites with edge exclusion up to 1.5 mm
    3. MOS Doping Profiles:
Dope: 8 x 1012 to 5 x 1018 ions/cm3 Depth: 0 to 10 Microns.
Repeatability: ±1.5% typical
    4. Interface Trap Density (DIT)
Range: 2 x 1010 states/cm2 to 2 x 1012 states/cm2
Repeatability: ±5% or ±1010 states/ cm2 whichever is larger
    5. Oxide Thickness Range: 24A to 20,000A by C-V method, 15A to 30A by I-V method
    6. Ion Implant Dose
Range: 1 x 1011 to 5 x 1012 ions/cm2 Repeatability: ±1% typical
    7. Epitaxial Doping Density
Range: 1 x 1014 to 1 x 1018 cm-3 Repeatability: ±2% typical
    8. Epitaxial Thickness
Range: 0.3 to 3 microns Repeatability: ±3% typical
    9. Generation Lifetime
Range: 0.01us to 100ms Repeatability: ±10% typical
    10. Insulating Film and Semi-Insulating Layer Resistivity Range: 1 x 106 to 1 x 1016 Ohm-cm in 30A to 1 mm thickness
    11. Current range: 50 fA to 1 mA
    12. Bias voltage: -100 to 100 Volts
    13. Measurement pulse: 50mV, 100 mV, or 150 mV, > 20us for Ch, >lms for Cq
    14. Probe: mercury dot only, mercury dot and one mercury ring, mercury dot with two mercury ring or external
    15. Compressed Air: 60Psi at 1.5 liter per minute maximum flow
    16. Vacuum: 28-inch Hg minimum at 0.5 liter/min maximum flow
1.3 Operation Features
The system software consists of six main parts:
    (1) The basic software has programs for measuring quasi-static, high frequency and deep pulsed C-V, displaying the curves, generating maps and storing data.
    (2) The program that uses C-V curves to determine doping profile and dosage of low dose implantation, epi and raw wafer.
    (3) The program that determines gate Oxide TDDB and Qbd, obtains Oxide I-V curves, checks the trap densities, and maps Oxide thickness.
    (4) The generation lifetime program that obtains carrier generation lifetime at different depth through measuring generation current at different biases.
    (5) The program for GaAs which maps dosage of epi and ion implantation; it also maps semi-insulating layer resistivities.
    (6) The program using psuedo MOST technique to characterize SOI.
1.4 System Composition
The system hardware mainly consists of:
    (1) The CVmap 92A/92B mercury instrument and its attachments that include hoses for vacuum, compressed air and N2
    (2) The system computer, a monitor, a printer, and a RS-232 cable for the communication between the CVmap instrument and the system computer.
    (3) Mercury Spill Control Station
    (4) Optional needle probe station for probing at pads.

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Minimum 150 mm
Maximum 300 mm

Set Size 200 mm

The CVMAP 3092A uses a mercury probe, which is insalled inside the instrument, to make contact to the wafer-under-test for C-V, I-V and other measurements.

CVMap3092A

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CVMap3092A

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CVMap3092A

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CVMap3092A

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CVMap3092A