説明
Polysilicon Etch構成
Alliance (A6) TCP 9400DSiE -Qty 1 - A6 Platform -Qty 3 - 9400DSiE Chambers 94-1608(F119229-PM2) 94-1673(F137127-PM1) 94-1609(F119229-PM4)OEMモデルの説明
The TCP 9400DSiE is a deep silicon etch system designed for high-volume production. It offers broad process capability and flexibility for MEMS, advanced packaging, and power semiconductor applications. The system is based on Lam’s TCP 9400 Etch Series and features a patented TCP plasma source for uniform ion flux and high cross-wafer uniformity. Lam’s Waferless AutoClean technology maintains a consistent chamber environment for superior process stability. With over 1,300 chambers installed worldwide, the TCP 9400DSiE is a reliable choice for meeting the challenges of Si DRIE.ドキュメント
ドキュメントなし
LAM RESEARCH CORPORATION
TCP 9400DSiE
検証済み
カテゴリ
RIE
主なアイテムの詳細
状態：
Used
稼働ステータス:
不明
製品ID：
83169
ウェーハサイズ：
6"/150mm
ヴィンテージ：
2009
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
LAM RESEARCH CORPORATION
TCP 9400DSiE
検証済み
カテゴリ
RIE
最終検証： 25日前
主なアイテムの詳細
状態：
Used
稼働ステータス:
不明
製品ID：
83169
ウェーハサイズ：
6"/150mm
ヴィンテージ：
2009
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
説明
Polysilicon Etch構成
Alliance (A6) TCP 9400DSiE -Qty 1 - A6 Platform -Qty 3 - 9400DSiE Chambers 94-1608(F119229-PM2) 94-1673(F137127-PM1) 94-1609(F119229-PM4)OEMモデルの説明
The TCP 9400DSiE is a deep silicon etch system designed for high-volume production. It offers broad process capability and flexibility for MEMS, advanced packaging, and power semiconductor applications. The system is based on Lam’s TCP 9400 Etch Series and features a patented TCP plasma source for uniform ion flux and high cross-wafer uniformity. Lam’s Waferless AutoClean technology maintains a consistent chamber environment for superior process stability. With over 1,300 chambers installed worldwide, the TCP 9400DSiE is a reliable choice for meeting the challenges of Si DRIE.ドキュメント
ドキュメントなし