説明
Missing Parts: PM1: Board IGBT CB 40A FUSES qty 10 PM2: DOOR MECHANICS HELIOS qty 1 PM1: MMC qty 1 PM2: MMC qty 1 PM1: O2 sensor qty 1 PM2: O2 sensor qty 1 PM1: Rotation controller qty 1 PM2: Rotation controller qty 1 FI: Robot controller, CURR, RR717 qty 1 PM1: Pyro chiller qty 1 PM1: Ring Tilt Mechanism Lift Unit qty 1 PM2: Ring Tilt Mechanism Lift Unit qty 1 FI: RD cable qty 1 FI: Sequencer qty 1構成
Rapid Thermal Processing Device After verifying with on-site personnel, it was confirmed that "the quartz inside the chamber is still intact and usable during shutdown.OEMモデルの説明
Helios family RTP systems offer unique double-side heating RTP technology. It can achieve the highest wafer temperature ramp rate while balancing wafer frontside and backside temperatures, eliminate pattern-loading effect, provide unique wafer stress management capabilities, satisfy technical requirements for RTP processes with different substrate thickness and device structures, and achieve the highest system productivity at the same time.ドキュメント
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同様のリスト
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MATTSON
HELIOS
カテゴリ
RTP/RTA
最終検証： 60日以上前
主なアイテムの詳細
状態：
Used
稼働ステータス:
不明
製品ID：
85012
ウェーハサイズ：
12"/300mm
ヴィンテージ：
2008
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説明
Missing Parts: PM1: Board IGBT CB 40A FUSES qty 10 PM2: DOOR MECHANICS HELIOS qty 1 PM1: MMC qty 1 PM2: MMC qty 1 PM1: O2 sensor qty 1 PM2: O2 sensor qty 1 PM1: Rotation controller qty 1 PM2: Rotation controller qty 1 FI: Robot controller, CURR, RR717 qty 1 PM1: Pyro chiller qty 1 PM1: Ring Tilt Mechanism Lift Unit qty 1 PM2: Ring Tilt Mechanism Lift Unit qty 1 FI: RD cable qty 1 FI: Sequencer qty 1構成
Rapid Thermal Processing Device After verifying with on-site personnel, it was confirmed that "the quartz inside the chamber is still intact and usable during shutdown.OEMモデルの説明
Helios family RTP systems offer unique double-side heating RTP technology. It can achieve the highest wafer temperature ramp rate while balancing wafer frontside and backside temperatures, eliminate pattern-loading effect, provide unique wafer stress management capabilities, satisfy technical requirements for RTP processes with different substrate thickness and device structures, and achieve the highest system productivity at the same time.ドキュメント
ドキュメントなし