説明
説明なし構成
-Exposing source: KrF(Wavelength 248nm、Cymer ELS-7300) -Laser on another floor -Right side only Console -Surface illumination (standard): 36000[W/㎡]or more -R Type Inline direction -Reduction ratio: 1:4 -Throughput: AGA 8shot 110wafer/hour or more ※Step pitch 26nm×33mm,64 shot (300mm wafers) Exposure amount 300J/m2 -Resolution: 120nm or less -Alignment accuracy: 20nm or less (M+ 3σ) -Lighting NA: Three equipped with Squeezing ①NA:0.80/σ0.80 CONV ②NA:0.80/σ0.40 CONV ③NA:0.80/SiB2 -Projection lens NA: Variable 0.55~0.80 -Exposure range (Scan Field):26×33mm -Wafer alignment: AGA(Off Axis Scope) -Reticle library: Max7sheet -Cool plate before exposure(WTC): None -Options: 6"PPC Unit、6"Reticle Barcode Reader(2D)、Signal Tower(4color)、Relay FOUP UnitOEMモデルの説明
The CANON FPA 5000 ES4 scanner is geared for both 200mm and 300mm wafer fabs. This lithography system is suitable for applications at the 100-nm (0.10-micron) and below. The FPA 5000-ES4 has high-throughput rates of 110 wafers per hour (wph) on 300mm and 160wph on 200mm. The s an expansion of Canon's high NA, 248-nm tools for mix-and-match applicationsドキュメント
ドキュメントなし
CANON
FPA-5000ES4
検証済み
カテゴリ
193 nm Step and Scan
主なアイテムの詳細
状態:
Used
稼働ステータス:
不明
製品ID:
24050
ウェーハサイズ:
12"/300mm
ヴィンテージ:
2003
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
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CANON
FPA-5000ES4
検証済み
カテゴリ
193 nm Step and Scan
最終検証: 60日以上前
主なアイテムの詳細
状態:
Used
稼働ステータス:
不明
製品ID:
24050
ウェーハサイズ:
12"/300mm
ヴィンテージ:
2003
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
説明
説明なし構成
-Exposing source: KrF(Wavelength 248nm、Cymer ELS-7300) -Laser on another floor -Right side only Console -Surface illumination (standard): 36000[W/㎡]or more -R Type Inline direction -Reduction ratio: 1:4 -Throughput: AGA 8shot 110wafer/hour or more ※Step pitch 26nm×33mm,64 shot (300mm wafers) Exposure amount 300J/m2 -Resolution: 120nm or less -Alignment accuracy: 20nm or less (M+ 3σ) -Lighting NA: Three equipped with Squeezing ①NA:0.80/σ0.80 CONV ②NA:0.80/σ0.40 CONV ③NA:0.80/SiB2 -Projection lens NA: Variable 0.55~0.80 -Exposure range (Scan Field):26×33mm -Wafer alignment: AGA(Off Axis Scope) -Reticle library: Max7sheet -Cool plate before exposure(WTC): None -Options: 6"PPC Unit、6"Reticle Barcode Reader(2D)、Signal Tower(4color)、Relay FOUP UnitOEMモデルの説明
The CANON FPA 5000 ES4 scanner is geared for both 200mm and 300mm wafer fabs. This lithography system is suitable for applications at the 100-nm (0.10-micron) and below. The FPA 5000-ES4 has high-throughput rates of 110 wafers per hour (wph) on 300mm and 160wph on 200mm. The s an expansion of Canon's high NA, 248-nm tools for mix-and-match applicationsドキュメント
ドキュメントなし
同様のリスト
すべて表示同様のリストが見つかりません