CANON acquired ANELVA and became CANON ANELVA Corporation which focuses on: Vacuum thin-film deposition and processing equipment, semiconductor device manufacturing equipment, storage device manufacturing equipment, equipment for electronic device manufacturing and for R&D, maintenance service, and vacuum components.


System configuration: Tray cluster PVD equipment
Substrate size: φ2" substrate to φ8" substrate

CANON / ANELVA

EC8100

Effectively consolidates magnetic head production processes.This is an integrated magnetic HEAD production equipment only possible with Canon ANELVA product lineup.

System configuration: Cluster type
Substrate size: φ150mm, φ200mm

HC7300

System configuration: Tray transport method (Load lock is option)
Substrate size: φ150mm maximum (Have it of load lock;greatest φ100mm)
Cathode: φ2" cathode ×3
Operation method: Auto pumping operation, manual transport/deposit operation
Footprint: W1800mm×D1100mm×H1550mm (standard specification)

EB1000

EC7700

Anelva: ILD-4100 three-chamber cluster tool. Helicon wave source licensed from Plasma and Materials Technology (MORI source), can be configured with Helicon, RIE, and microwave downstream asher chambers, metal etch, poly etch processes.

ILD-4100

The Anelva ILC-1015 is a sputtering system manufactured by Canon/Anelva. It is used for semiconductor processing assembly

ILC-1015

System configuration: Cluster type
Substrate: φ100mm, φ150mm
Main pump: Turbo Moleculer Pump (TMP)
Electric power: 3φ AC200V±10% 125A 50/60Hz
Cooling water: 30〜34L/min 0.2〜0.3MPa 15〜30℃
Compressed air: 0.5〜0.8MPa
Process Gas: 0.15〜0.4MPa
Throughput: 3.5min/set (It varies according to a process condition)
Weight: 3720kg (Main body)
Footprint: W3300mm×D5100mm (standard specification)

BC7000

IC7400

System configuration: Cluster type (up to three annealing chambers) C to C type
Substrate size: φ3", φ4", φ6"

EC7200

System configuration: Vertical Inline configuration

Applicable process module for one side will be as follows
• Anneal module
• Sputtering module

Substrate:
□650mm
□300mm
φ300mm

EL3400

I-4100MR

High sensitivity and high power!
Adopted a new platform (newly developed TMP / Valve block).

M-222LD-H

SPF-313H

C-7010C

IC7500

EC3000

System configuration: Load lock type tray transport method
Substrate size: φ200mm maximum
Cathode: φ4" cathode ×3 (Option: φ12.5" cathode ×1, φ4" cathode ×4)
Operation method: Fully automated (pumping, transport, deposition)

EB1100

C 7100

Upgrade from HC7100 (PVD equipment for head) enabling mass-production of φ300 mm wafers based on experience with the φ300 mm wafer production line.

EC7800

ILC 1000

HC7100 is a sputtering equipment for GMR heads and TMR heads that utilizes the tunnel effect.
System configuration: Cluster type
Substrate size: φ150mm、φ200mm

HC7100

The Anelva I-1060 SVII PLUS-1 is a sputter coating equipment that provides users with precise metal film deposition capabilities. This sputtering system is used to physically vaporize metal pellets, which can then be deposited onto a substrate through reactive ionization equipment

I-1060 SVII PLUS-1

System configuration: Cluster-type (EC7000 sputtering chamber ×1, EC7001 sputtering chamber ×2) Tray transport method
Substrate size: φ200mm maximum
Cathode: φ4" cathode ×3 (Option: φ12.5" cathode ×1, φ4" cathode ×4)
Operation method: Fully automated (pumping, transport, deposition)

EC7000

The Anelva ILC-1060 is a specific model of a magnetron sputtering system. It features  features a vacuum chamber that provides a controlled environment for thin film deposition. The ILC-1060 can accommodate a variety of target materials, such as metals, alloys, or compounds, depending on the specific application requirements

ILC-1060

C3010

High sensitivity and high power!
Adopted a new platform (newly developed TMP / Valve block), high sensitivity and high response type with FINE mode as the standard. Even higher power type with 500L/min multi-stage roots pump.

M-222LD-D-H_500

MRAM volume manufacturing
System configuration: Cluster type
Substrate size: φ300mm

NC8000

The Anelva I-1060 SV is a sputtering system that can handle 8" wafers with a notch. It has a Chamber L1 with an Etch (TMP) structure, a 110 Holder Mg, and uses Ar gas. The power supply for this chamber is 60M + 400 KHz, 1kW (RF).

I-1060 SV

Compact and Dry!
Low compact and dry type with diaphragm pump.

M-212LD-D

High power!
High power type with increased power over the Model 212's roughing pump.

M-222LD

EL3000

System configuration: Cluster type (up to three process chambers) C to C type
Substrate size: φ200mm maximum
Cathode: φ7.1" cathode (Up to 4. Varies depending on the module.)

Modules:
Offset rotary sputtering module (multi-cathode specification)
Offset rotary and revolutionary sputtering module
Etching module (preprocessing)
Preheating module (preprocessing)

EC7400

System configuration: Cluster type
Substrate: Φ300 mm

NC7900

M-232LD

SPF-430H

System configuration: Cluster type
Substrate size: φ300mm

EC8000

C-7300EX

EVC-1701

C-7730FH

EC7001

ML3000

I-2100

FC7100

FC7102

M-212LD

Electronic component production
System configuration: Horizontal inline type
Substrate size: Effective deposition area 300mm×450mm
Cathode: 5"×16" cathode×3 (single side)

EL3200

IC7200

I-1230

COSMOS 300 I-1201

SPF-312

C-7010

I 2300SRE

High sensitivity and high power!
high sensitivity and high response type with FINE mode as the standard.

6" Fab For Sale from Moov - Click Here to Learn More

6" Fab For Sale from Moov - Click Here to Learn More

6" Fab For Sale from Moov - Click Here to Learn More

CANON / ANELVA

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EC7700

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