説明
Atmospheric Depo LD: 3ea, no modification, CVD構成
Atmospheric Depo LD: 3ea, no modification (Chamber) Atmospheric CVD (process) SiH4, O2, HF (Gas) DOS (Operating system) -PROGRESS TYPE: DCVD -CHAMBER POSITION: SINGLE BODY -DAIHEN Controller : Model CS-8600 PN XE4070 -MANIPULATOR Controller : MECS UTC800F -MONITOR Rack : SK907354-001 RA -Model Configuration : UTC-R800PX-XV0034OEMモデルの説明
The Watkins Johnson (WJ) WJ-999R is an advanced and versatile system designed for chemical vapor deposition (APCVD) applications in semiconductor production lines using 100mm to 150mm wafers. It has the capability to process two wafers simultaneously in parallel, optimizing throughput. The system offers the flexibility to handle both doped and un-doped silicon dioxide processing, making it suitable for a wide range of semiconductor manufacturing requirements.ドキュメント
ドキュメントなし
AVIZA / WATKINS-JOHNSON
WJ-999R
検証済み
カテゴリ
CVD
最終検証： 3日前
主なアイテムの詳細
状態：
Used
稼働ステータス:
Deinstalled
製品ID：
105238
ウェーハサイズ：
8"/200mm
ヴィンテージ：
1998
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
AVIZA / WATKINS-JOHNSON
WJ-999R
カテゴリ
CVD
最終検証： 3日前
主なアイテムの詳細
状態：
Used
稼働ステータス:
Deinstalled
製品ID：
105238
ウェーハサイズ：
8"/200mm
ヴィンテージ：
1998
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
説明
Atmospheric Depo LD: 3ea, no modification, CVD構成
Atmospheric Depo LD: 3ea, no modification (Chamber) Atmospheric CVD (process) SiH4, O2, HF (Gas) DOS (Operating system) -PROGRESS TYPE: DCVD -CHAMBER POSITION: SINGLE BODY -DAIHEN Controller : Model CS-8600 PN XE4070 -MANIPULATOR Controller : MECS UTC800F -MONITOR Rack : SK907354-001 RA -Model Configuration : UTC-R800PX-XV0034OEMモデルの説明
The Watkins Johnson (WJ) WJ-999R is an advanced and versatile system designed for chemical vapor deposition (APCVD) applications in semiconductor production lines using 100mm to 150mm wafers. It has the capability to process two wafers simultaneously in parallel, optimizing throughput. The system offers the flexibility to handle both doped and un-doped silicon dioxide processing, making it suitable for a wide range of semiconductor manufacturing requirements.ドキュメント
ドキュメントなし