説明
WCVD (Chemical Vapor Deposition)構成
構成なしOEMモデルの説明
ALTUS Max ICEFill is a product from Lam’s ALTUS family of systems that combines Chemical Vapor Deposition (CVD) and Atomic Layer Deposition (ALD) technologies to deposit highly conformal films for advanced tungsten metallization applications. It addresses industry challenges such as minimizing contact resistance and enabling complete, defect-free tungsten fill for nanoscale structures. The product offers benefits such as lower overall resistivity of thin W films, low-fluorine and low-stress W fill for advanced 3D NAND and DRAM, and high step coverage with reduced thickness films by using ALD in the deposition of WN films. It is used for key applications such as tungsten plug and via fill, 3D NAND wordlines, low-stress composite interconnects, and WN barrier for via and contact metallization.ドキュメント
ドキュメントなし
カテゴリ
CVD
最終検証： 30日以上前
主なアイテムの詳細
状態：
Used
稼働ステータス:
不明
製品ID：
135689
ウェーハサイズ：
12"/300mm
ヴィンテージ：
不明
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
LAM RESEARCH / NOVELLUS
ALTUS MAX ICEFill
カテゴリ
CVD
最終検証： 30日以上前
主なアイテムの詳細
状態：
Used
稼働ステータス:
不明
製品ID：
135689
ウェーハサイズ：
12"/300mm
ヴィンテージ：
不明
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
説明
WCVD (Chemical Vapor Deposition)構成
構成なしOEMモデルの説明
ALTUS Max ICEFill is a product from Lam’s ALTUS family of systems that combines Chemical Vapor Deposition (CVD) and Atomic Layer Deposition (ALD) technologies to deposit highly conformal films for advanced tungsten metallization applications. It addresses industry challenges such as minimizing contact resistance and enabling complete, defect-free tungsten fill for nanoscale structures. The product offers benefits such as lower overall resistivity of thin W films, low-fluorine and low-stress W fill for advanced 3D NAND and DRAM, and high step coverage with reduced thickness films by using ALD in the deposition of WN films. It is used for key applications such as tungsten plug and via fill, 3D NAND wordlines, low-stress composite interconnects, and WN barrier for via and contact metallization.ドキュメント
ドキュメントなし