説明
Bright Field構成
Bright FieldOEMモデルの説明
The Applied UVision® 4 wafer Inspection system was introduced in 2010, enabling customers to detect yield-limiting defects in the critical patterning layers of 32nm and below logic and memory devices using DUV laser-based imaging technology. The UVision 4 system’s extendable architecture of high-power polarized deep ultra-violet laser, optimized scattered light collection, and advanced noise reduction capabilities, addresses the inspection challenges of 32nm and below with optical inspection capabilities beyond the resolution limits of conventional brightfield (BF) inspection. Innovative algorithms enable simultaneous detection of systematic mask induced defects (i.e., "haze" defects) and random defects at production worthy throughput made possible by an enhanced image processor. Wide dynamic range detection schemes eliminate the multiple region-specific scans previously required, enabling regions of a chip with differing contrasts to be imaged with optimal sensitivity in a single pass without compromising throughput.ドキュメント
ドキュメントなし
APPLIED MATERIALS (AMAT)
UVISION 4
検証済み
カテゴリ
Defect Inspection
最終検証： 60日以上前
主なアイテムの詳細
状態：
Used
稼働ステータス:
不明
製品ID：
40317
ウェーハサイズ：
12"/300mm
ヴィンテージ：
2009
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
同様のリスト
すべて表示
APPLIED MATERIALS (AMAT)
UVISION 4
カテゴリ
Defect Inspection
最終検証： 60日以上前
主なアイテムの詳細
状態：
Used
稼働ステータス:
不明
製品ID：
40317
ウェーハサイズ：
12"/300mm
ヴィンテージ：
2009
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
説明
Bright Field構成
Bright FieldOEMモデルの説明
The Applied UVision® 4 wafer Inspection system was introduced in 2010, enabling customers to detect yield-limiting defects in the critical patterning layers of 32nm and below logic and memory devices using DUV laser-based imaging technology. The UVision 4 system’s extendable architecture of high-power polarized deep ultra-violet laser, optimized scattered light collection, and advanced noise reduction capabilities, addresses the inspection challenges of 32nm and below with optical inspection capabilities beyond the resolution limits of conventional brightfield (BF) inspection. Innovative algorithms enable simultaneous detection of systematic mask induced defects (i.e., "haze" defects) and random defects at production worthy throughput made possible by an enhanced image processor. Wide dynamic range detection schemes eliminate the multiple region-specific scans previously required, enabling regions of a chip with differing contrasts to be imaged with optimal sensitivity in a single pass without compromising throughput.ドキュメント
ドキュメントなし