説明
P-5000 Mark II MxP+ Dielectric構成
Dielectric Etch Etch/Ash/Clean - Plasma Processing Currently Configured for: 200mm Software: 4.8_26 MF: P5000 Mark II Qty 4 - MxP+ Dielectric ESC: Ceramic Gases Used: CO, N2, CF4, AR, O2, CHF3, C4F8 MFCs: 27 DIgital MFC's Unit or Horiba Robot: ROBOT ASSY 8 IN AMAT 5000 Dry Pumps: 1-BA100, 1 DS80/250, 3-IQDP80/WSU151 Chillers: 3 Neslab 150, 1-AMAT-0OEMモデルの説明
The AMAT P5000 Etch is a magnetically enhanced reactive ion etching system (MERIE) with two functional process chambers (Chambers B & C). P5000 Chamber B is primarily used for etching silicon based dielectrics (silicon dioxide, silcon nitride, etc.) and some carbon based compounds (resist, poly imide, etc) while chamber C is mainly used for silicon etching with high selectivity to underlying dielectric such as silicon dioxide. The system can process only 4" wafers. Pieces have to be attached to a 4" wafer. Though the process chamber processes one wafer at a time, up to 25 wafers can be loaded per batch.ドキュメント
ドキュメントなし
カテゴリ
Dry / Plasma Etch
最終検証： 60日以上前
主なアイテムの詳細
状態：
Used
稼働ステータス:
不明
製品ID：
125399
ウェーハサイズ：
6"/150mm, 8"/200mm
ヴィンテージ：
不明
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
同様のリスト
すべて表示
APPLIED MATERIALS (AMAT)
P5000 ETCH
カテゴリ
Dry / Plasma Etch
最終検証： 60日以上前
主なアイテムの詳細
状態：
Used
稼働ステータス:
不明
製品ID：
125399
ウェーハサイズ：
6"/150mm, 8"/200mm
ヴィンテージ：
不明
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
説明
P-5000 Mark II MxP+ Dielectric構成
Dielectric Etch Etch/Ash/Clean - Plasma Processing Currently Configured for: 200mm Software: 4.8_26 MF: P5000 Mark II Qty 4 - MxP+ Dielectric ESC: Ceramic Gases Used: CO, N2, CF4, AR, O2, CHF3, C4F8 MFCs: 27 DIgital MFC's Unit or Horiba Robot: ROBOT ASSY 8 IN AMAT 5000 Dry Pumps: 1-BA100, 1 DS80/250, 3-IQDP80/WSU151 Chillers: 3 Neslab 150, 1-AMAT-0OEMモデルの説明
The AMAT P5000 Etch is a magnetically enhanced reactive ion etching system (MERIE) with two functional process chambers (Chambers B & C). P5000 Chamber B is primarily used for etching silicon based dielectrics (silicon dioxide, silcon nitride, etc.) and some carbon based compounds (resist, poly imide, etc) while chamber C is mainly used for silicon etching with high selectivity to underlying dielectric such as silicon dioxide. The system can process only 4" wafers. Pieces have to be attached to a 4" wafer. Though the process chamber processes one wafer at a time, up to 25 wafers can be loaded per batch.ドキュメント
ドキュメントなし