説明
説明なし構成
Process Capabilities : Plasma Etch Chamber 1 Description : dual zone ESC Controller Type : VME Temperature Control : Single Pyrometer External Cooling : Water Cooled Accessories Rocker Valve for Installation on V2 Mainframe 16 Slot Gasbox Power Requirements : 100-240 V 41.0 A 50/60 Hz Cooling Water Required : Minimum Temperature: 10 ºC (50 ºF, 283.00 ºK) Maximum Temperature: 50 ºC (122 ºF, 323 ºK)OEMモデルの説明
The 2300 Versys Kiyo is a manufacturing tool designed for 65 nm and beyond. It provides excellent uniformity and defect control on a reliable wafer transport system. The symmetric chamber and radial tuning features produce uniform etch results for advanced devices. It employs proprietary technology for process repeatability, low defect, and metal contamination results. It supports conventional applications such as gate and shallow trench isolation (STI) and emerging applications such as high k dielectric removal, critical spacer etch, and lithography-enabling etch steps. The system can be upgraded from the 2300 Versys Star, providing an investment-extending strategy.ドキュメント
ドキュメントなし
カテゴリ
Dry / Plasma Etch
最終検証： 60日以上前
主なアイテムの詳細
状態：
Used
稼働ステータス:
不明
製品ID：
125819
ウェーハサイズ：
8"/200mm
ヴィンテージ：
2008
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
同様のリスト
すべて表示
LAM RESEARCH CORPORATION
2300 VERSYS KIYO
カテゴリ
Dry / Plasma Etch
最終検証： 60日以上前
主なアイテムの詳細
状態：
Used
稼働ステータス:
不明
製品ID：
125819
ウェーハサイズ：
8"/200mm
ヴィンテージ：
2008
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
説明
説明なし構成
Process Capabilities : Plasma Etch Chamber 1 Description : dual zone ESC Controller Type : VME Temperature Control : Single Pyrometer External Cooling : Water Cooled Accessories Rocker Valve for Installation on V2 Mainframe 16 Slot Gasbox Power Requirements : 100-240 V 41.0 A 50/60 Hz Cooling Water Required : Minimum Temperature: 10 ºC (50 ºF, 283.00 ºK) Maximum Temperature: 50 ºC (122 ºF, 323 ºK)OEMモデルの説明
The 2300 Versys Kiyo is a manufacturing tool designed for 65 nm and beyond. It provides excellent uniformity and defect control on a reliable wafer transport system. The symmetric chamber and radial tuning features produce uniform etch results for advanced devices. It employs proprietary technology for process repeatability, low defect, and metal contamination results. It supports conventional applications such as gate and shallow trench isolation (STI) and emerging applications such as high k dielectric removal, critical spacer etch, and lithography-enabling etch steps. The system can be upgraded from the 2300 Versys Star, providing an investment-extending strategy.ドキュメント
ドキュメントなし