説明
説明なし構成
-Robot type: Shuttle film collection Shuttle film collection -Software: Classic -Materials etched: Metal metal -List of process gases:CL2/BCL3/O2/HE/SF6/N2/CF4 -Etch process: Metal etching metal etching -Contains two chambers: One for etching; A glue remover. Containing molecular sieve contains two chambers: one for etching; one for glue remover. Contains molecular sieves.OEMモデルの説明
The TCP 9600SE is a high density, low pressure etch system from Lam’s TCP product line. It incorporates the Company’s patented Transformer Coupled Plasma source technology for etching 0.35 micron and smaller geometries. It is used for metal etch applications and is designed to offer customers a reliable, lower cost of ownership solution to their advanced needs. The system operates at lower pressures for improved pattern transfer control and higher plasma density for higher etch rates. It is available as a stand-alone, single wafer tool, or on the Alliance multichamber cluster platform.ドキュメント
ドキュメントなし
カテゴリ
Dry / Plasma Etch
最終検証: 昨日
主なアイテムの詳細
状態:
Used
稼働ステータス:
不明
製品ID:
119511
ウェーハサイズ:
6"/150mm
ヴィンテージ:
不明
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
同様のリスト
すべて表示LAM RESEARCH CORPORATION
TCP 9600SE
カテゴリ
Dry / Plasma Etch
最終検証: 昨日
主なアイテムの詳細
状態:
Used
稼働ステータス:
不明
製品ID:
119511
ウェーハサイズ:
6"/150mm
ヴィンテージ:
不明
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
説明
説明なし構成
-Robot type: Shuttle film collection Shuttle film collection -Software: Classic -Materials etched: Metal metal -List of process gases:CL2/BCL3/O2/HE/SF6/N2/CF4 -Etch process: Metal etching metal etching -Contains two chambers: One for etching; A glue remover. Containing molecular sieve contains two chambers: one for etching; one for glue remover. Contains molecular sieves.OEMモデルの説明
The TCP 9600SE is a high density, low pressure etch system from Lam’s TCP product line. It incorporates the Company’s patented Transformer Coupled Plasma source technology for etching 0.35 micron and smaller geometries. It is used for metal etch applications and is designed to offer customers a reliable, lower cost of ownership solution to their advanced needs. The system operates at lower pressures for improved pattern transfer control and higher plasma density for higher etch rates. It is available as a stand-alone, single wafer tool, or on the Alliance multichamber cluster platform.ドキュメント
ドキュメントなし