説明
説明なし構成
構成なしOEMモデルの説明
Certas LEAGA™ is an environment-friendly, high-throughput gas chemical etch system designed for 300mm wafers that provides surface etch and cleaning without the use of liquids. Its dry processing features watermark-free, unique selectivity performance over various SiO2 films and precise control of interface cleaning. It offers greater flexibility when combined with TEL’s cleaning system. Certas LEAGA™ supports a number of isotropic process requirements for 3D-structure devices with high utilization capability and low cost operation through its plasma-free solution. Up to six dual-wafer processing chambers can be installed on a single platform to satisfy various process requirements. Easily configurable process units enable device scaling and enhanced productivity. Certas LEAGA™ provides highly precise process solutions such as surface pre-cleaning of Si contact formation, oxide film removal and etch back, selective etch in high-aspect 3D structure, and precise recess process, and has been widely adopted by global semiconductor manufacturers from volume manufacturing to next generation development.ドキュメント
ドキュメントなし
カテゴリ
Dry / Plasma Etch
最終検証： 2日前
主なアイテムの詳細
状態：
Used
稼働ステータス:
不明
製品ID：
154424
ウェーハサイズ：
12"/300mm
ヴィンテージ：
不明
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
TEL / TOKYO ELECTRON
Certas LEAGA
カテゴリ
Dry / Plasma Etch
最終検証： 2日前
主なアイテムの詳細
状態：
Used
稼働ステータス:
不明
製品ID：
154424
ウェーハサイズ：
12"/300mm
ヴィンテージ：
不明
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
説明
説明なし構成
構成なしOEMモデルの説明
Certas LEAGA™ is an environment-friendly, high-throughput gas chemical etch system designed for 300mm wafers that provides surface etch and cleaning without the use of liquids. Its dry processing features watermark-free, unique selectivity performance over various SiO2 films and precise control of interface cleaning. It offers greater flexibility when combined with TEL’s cleaning system. Certas LEAGA™ supports a number of isotropic process requirements for 3D-structure devices with high utilization capability and low cost operation through its plasma-free solution. Up to six dual-wafer processing chambers can be installed on a single platform to satisfy various process requirements. Easily configurable process units enable device scaling and enhanced productivity. Certas LEAGA™ provides highly precise process solutions such as surface pre-cleaning of Si contact formation, oxide film removal and etch back, selective etch in high-aspect 3D structure, and precise recess process, and has been widely adopted by global semiconductor manufacturers from volume manufacturing to next generation development.ドキュメント
ドキュメントなし