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説明
RIE Single Wafer Plasma Metal Etcher 8” (dia.) Chuck RFX-600 RF Generator, 13.56 MHz Automatic RF Matching Network Vacuum Loadlock 4ea Mass Flow Controllers 100 sccm O2 100 sccm CF4 50 sccm Cl2 100 sccm BCl3 PC Process Controller Color Touch Screen Graphical User Interface構成
構成なしOEMモデルの説明
The Minilock system incorporates a vacuum load-lock in a compact table top console. The system has been designed to meet all the safety and equipment needs for the more challenging processes in the laboratory environment. Its modular design and optional gas cabinet provide the user with a turnkey system that meets your safety, facility and processing needs. The Minilock is suitable for anisotropic etching of aluminum, silicides, gallium arsenide and other materials requiring chlorinated chemistries. It is also suitable for anisotropic etching of silicon dioxide, silicon nitride and other materials requiring high selectivity and a controlled anisotropic etch. The system specifications are 35"Wx26"Dx48"H with RF Power of 600 watt, 13.56 MHz and up to 6 Mass Flow Controllers. The maximum wafer size is up to 8".ドキュメント
ドキュメントなし
TRION
MINILOCK
カテゴリ
Dry / Plasma Etch
最終検証： 60日以上前
主なアイテムの詳細
状態：
Used
稼働ステータス:
不明
製品ID：
12010
ウェーハサイズ：
8"/200mm
ヴィンテージ：
1995
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説明
RIE Single Wafer Plasma Metal Etcher 8” (dia.) Chuck RFX-600 RF Generator, 13.56 MHz Automatic RF Matching Network Vacuum Loadlock 4ea Mass Flow Controllers 100 sccm O2 100 sccm CF4 50 sccm Cl2 100 sccm BCl3 PC Process Controller Color Touch Screen Graphical User Interface構成
構成なしOEMモデルの説明
The Minilock system incorporates a vacuum load-lock in a compact table top console. The system has been designed to meet all the safety and equipment needs for the more challenging processes in the laboratory environment. Its modular design and optional gas cabinet provide the user with a turnkey system that meets your safety, facility and processing needs. The Minilock is suitable for anisotropic etching of aluminum, silicides, gallium arsenide and other materials requiring chlorinated chemistries. It is also suitable for anisotropic etching of silicon dioxide, silicon nitride and other materials requiring high selectivity and a controlled anisotropic etch. The system specifications are 35"Wx26"Dx48"H with RF Power of 600 watt, 13.56 MHz and up to 6 Mass Flow Controllers. The maximum wafer size is up to 8".ドキュメント
ドキュメントなし