説明
This is a ULVAC NE950 (APIOS NE-950EX) inductively coupled plasma dry etching machine, a high-performance semiconductor process equipment specially designed for LED mass production and compound semiconductor processing. The equipment is equipped with ULVAC CTS-1500 chiller and CRYO-U20 Cryopump vacuum system, which ensures stable operation of the equipment and meets high-precision process requirements. It supports 2-12 inch wafer etching, with batch processing capacity, which can greatly improve production efficiency. The equipment adopts ICP-RIE dry etching process, which can realize high-precision material removal through the combination of physical sputtering and chemical reaction, and supports Bosch process, low-temperature etching and other process modes. It is compatible with a variety of etchable materials, including Metal, GaN, InP, SiO₂, Si, Polyimide, Sapphire, ITO, SiC, AlN, ZnO and quaternary compound semiconductors, and is widely used in LED device manufacturing, MEMS fabrication, optoelectronic component processing and other fields. The specialty gas lines of the equipment are made of 316L BA/EP stainless steel with VCR face seal joints, which have high cleanliness and zero leakage performance, and are equipped with precision pressure regulating valves, MFC and leak detection devices to ensure safe and stable gas supply. The equipment is also equipped with HDD and original ULVAC operating software, supporting process recipe editing, real-time parameter monitoring and data recording, which is easy to operate. The equipment has been fully refurbished and tested, with complete maintenance records and all functions in normal operation. We provide on-site inspection and functional testing services for buyers, and can provide paid on-site installation, commissioning and process training services according to needs. The price is negotiable, and welcome interested buyers to contact us through Moov internal messages for more details such as equipment test videos and maintenance records.構成
① Plasma System: Magnetic field ICP (ISM) high-density plasma source, equipped with ULVAC proprietary star-shaped electrode to prevent RF input window contamination; ② Wafer Handling: Load-lock type automatic loading and unloading, supporting 2-6 inch wafers (batch processing capacity: 29 pcs/batch for 2-inch, 12 pcs/batch for 3-inch, 7 pcs/batch for 4-inch, 3 pcs/batch for 6-inch); ③ Process Uniformity: High process uniformity (±3% for 4-inch wafer) and stability, suitable for mass production; ④ Safety Protection: Equipped with emergency cut-off valve (ESD), gas leak detection, over-temperature and over-pressure alarm functions; ⑤ Maintenance: Simple structure, easy maintenance, complete Depo countermeasures to ensure long-term stable operation; ⑥ Supporting Equipment: Compatible with ULVAC original gas cabinet, exhaust gas treatment system and process monitoring equipment.OEMモデルの説明
提供なしドキュメント
主なアイテムの詳細
状態：
Refurbished
稼働ステータス:
Deinstalled / Crated
製品ID：
140150
ウェーハサイズ：
2"/50mm, 3"/75mm, 4"/100mm, 5"/125mm, 6"/150mm, 8"/200mm, 12"/300mm
Chiller:
ULVAC CTS-1500, which is specially matched with ULVAC NE950 etching machine. It meets the cooling requirements of RF power supply, process chamber and vacuum pump set, with temperature control accuracy of ±0.5℃, ensuring stable operation of the equipment during mass production.
Pumps:
Main pump (high vacuum pump): ULVAC CRYO-U20 Cryopump, with pumping speed of 2000L/s (N₂) and ultimate vacuum ≤5×10⁻⁸ Pa, suitable for high-vacuum process requirements of 4-6 inch wafer etching. It is matched with ULVAC original dry scroll pump as the backing pump to form a complete vacuum system.
HDD / Software:
Yes
Gas Lines:
The equipment is equipped with specialty gas lines (semiconductor standard) made of 316L BA/EP stainless steel (caliber: 1/4", 3/8", 1/2") with VCR face seal joints (high cleanliness and zero leakage). The gas lines are compatible with etchable materials including Metal, GaN, InP, SiO₂, Si, Polyimide, Sapphire, ITO, SiC, AlN, ZnO, quaternary compound semiconductors. The system is equipped with precision pressure regulating valves, mass flow controllers (MFC), particle filters and leak detection devices to ensure safe and stable gas supply.
Process:
It adopts inductively coupled plasma dry etching process (ICP-RIE). Under high vacuum conditions, RF high-frequency discharge generates high-density plasma, which realizes high-precision material removal through the combined action of physical sputtering and chemical reaction. It supports Bosch process, low-temperature etching and other process modes, and is specially optimized for LED mass production and compound semiconductor processing.
ヴィンテージ：
2018
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
同様のリスト
すべて表示
ULVAC
NE-950EX
カテゴリ
Dry / Plasma Etch
最終検証： 9日前
主なアイテムの詳細
状態：
Refurbished
稼働ステータス:
Deinstalled / Crated
製品ID：
140150
ウェーハサイズ：
2"/50mm, 3"/75mm, 4"/100mm, 5"/125mm, 6"/150mm, 8"/200mm, 12"/300mm
Chiller:
ULVAC CTS-1500, which is specially matched with ULVAC NE950 etching machine. It meets the cooling requirements of RF power supply, process chamber and vacuum pump set, with temperature control accuracy of ±0.5℃, ensuring stable operation of the equipment during mass production.
Pumps:
Main pump (high vacuum pump): ULVAC CRYO-U20 Cryopump, with pumping speed of 2000L/s (N₂) and ultimate vacuum ≤5×10⁻⁸ Pa, suitable for high-vacuum process requirements of 4-6 inch wafer etching. It is matched with ULVAC original dry scroll pump as the backing pump to form a complete vacuum system.
HDD / Software:
Yes
Gas Lines:
The equipment is equipped with specialty gas lines (semiconductor standard) made of 316L BA/EP stainless steel (caliber: 1/4", 3/8", 1/2") with VCR face seal joints (high cleanliness and zero leakage). The gas lines are compatible with etchable materials including Metal, GaN, InP, SiO₂, Si, Polyimide, Sapphire, ITO, SiC, AlN, ZnO, quaternary compound semiconductors. The system is equipped with precision pressure regulating valves, mass flow controllers (MFC), particle filters and leak detection devices to ensure safe and stable gas supply.
Process:
It adopts inductively coupled plasma dry etching process (ICP-RIE). Under high vacuum conditions, RF high-frequency discharge generates high-density plasma, which realizes high-precision material removal through the combined action of physical sputtering and chemical reaction. It supports Bosch process, low-temperature etching and other process modes, and is specially optimized for LED mass production and compound semiconductor processing.
ヴィンテージ：
2018
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available