説明
Number of cassettes/chambers: 3 Load Ports/ 2x SWLL/ 4 Process Chambers Throughput: ≃16 wafer/hour for 2.3 um thickness of intrisic Si Loader unit type: FI 6.3構成
構成なしOEMモデルの説明
Applied Materials Centura Epi system is a production-proven, single-wafer, multi-chamber epitaxial silicon deposition product. Each radiantly-heated process chamber delivers precise and repeatable control of deposition conditions and 100% slip free films, excellent film thickness and resistivity uniformity, and low defect levels. The system’s wide range of temperatures and pressures, excellent temperature uniformity, and flexible gas panel configurations enable advanced low-temperature epitaxial and polycrystalline deposition processes, including germanium and silicon-germanium. In addition, the ability to configure up to three process chambers and hardware optimized for superior in-situ chamber cleaning deliver market-leading throughput density and low cost of ownership.ドキュメント
ドキュメントなし
カテゴリ
Epitaxial deposition (EPI)
最終検証： 3日前
主なアイテムの詳細
状態：
Used
稼働ステータス:
不明
製品ID：
150777
ウェーハサイズ：
12"/300mm
ヴィンテージ：
2018
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
同様のリスト
すべて表示
APPLIED MATERIALS (AMAT)
CENTURA ACP EPI
カテゴリ
Epitaxial deposition (EPI)
最終検証： 3日前
主なアイテムの詳細
状態：
Used
稼働ステータス:
不明
製品ID：
150777
ウェーハサイズ：
12"/300mm
ヴィンテージ：
2018
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
説明
Number of cassettes/chambers: 3 Load Ports/ 2x SWLL/ 4 Process Chambers Throughput: ≃16 wafer/hour for 2.3 um thickness of intrisic Si Loader unit type: FI 6.3構成
構成なしOEMモデルの説明
Applied Materials Centura Epi system is a production-proven, single-wafer, multi-chamber epitaxial silicon deposition product. Each radiantly-heated process chamber delivers precise and repeatable control of deposition conditions and 100% slip free films, excellent film thickness and resistivity uniformity, and low defect levels. The system’s wide range of temperatures and pressures, excellent temperature uniformity, and flexible gas panel configurations enable advanced low-temperature epitaxial and polycrystalline deposition processes, including germanium and silicon-germanium. In addition, the ability to configure up to three process chambers and hardware optimized for superior in-situ chamber cleaning deliver market-leading throughput density and low cost of ownership.ドキュメント
ドキュメントなし