説明
Etch shallow and deep SiC materials from small pieces up to 4in wafer size構成
Etched: SiO2, quartz, Pyrex, fused silica, Si3N4, bulk silicon Masks: Si, PR & Metals (Cr, Ti, Ni) 3000W 13.56MHz AE – Coil 1000W 13.56MHz ENI – Platen Backside Helium Cooling with Standard 8-pin clamp & lip seal C4F8, SF6, O2, H2, CF4, two open gas slots 2-80mT Process Pressure Platen -20°C to 120°C, Walls 100°C, Lid 120°C 2.5µm isolated trenches on 8-10µm TEOS Etch rate greater than 2000Å/min SiO2, greater than 4:1 selectivity SiO2: PR, etch rate variability intra- and inter-wafer ±3%, sidewalls 85-90° 5µm features on 3-10µm SiO2 Etch rate greater than 3000Å/min SiO2, greater than 7.5:1 selectivity SiO2:PR, etch rate variability intra- and inter-wafer ±2%, sidewalls 89-90° Converted to 100mm w/ ceramic parts (from quartz)OEMモデルの説明
提供なしドキュメント
ドキュメントなし
STS
MESC MULTIPLEX AOE
検証済み
カテゴリ
Etch/Asher
最終検証： 60日以上前
主なアイテムの詳細
状態：
Used
稼働ステータス:
不明
製品ID：
73234
ウェーハサイズ：
2"/50mm, 4"/100mm, 6"/150mm
ヴィンテージ：
不明
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
STS
MESC MULTIPLEX AOE
カテゴリ
Etch/Asher
最終検証： 60日以上前
主なアイテムの詳細
状態：
Used
稼働ステータス:
不明
製品ID：
73234
ウェーハサイズ：
2"/50mm, 4"/100mm, 6"/150mm
ヴィンテージ：
不明
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
説明
Etch shallow and deep SiC materials from small pieces up to 4in wafer size構成
Etched: SiO2, quartz, Pyrex, fused silica, Si3N4, bulk silicon Masks: Si, PR & Metals (Cr, Ti, Ni) 3000W 13.56MHz AE – Coil 1000W 13.56MHz ENI – Platen Backside Helium Cooling with Standard 8-pin clamp & lip seal C4F8, SF6, O2, H2, CF4, two open gas slots 2-80mT Process Pressure Platen -20°C to 120°C, Walls 100°C, Lid 120°C 2.5µm isolated trenches on 8-10µm TEOS Etch rate greater than 2000Å/min SiO2, greater than 4:1 selectivity SiO2: PR, etch rate variability intra- and inter-wafer ±3%, sidewalls 85-90° 5µm features on 3-10µm SiO2 Etch rate greater than 3000Å/min SiO2, greater than 7.5:1 selectivity SiO2:PR, etch rate variability intra- and inter-wafer ±2%, sidewalls 89-90° Converted to 100mm w/ ceramic parts (from quartz)OEMモデルの説明
提供なしドキュメント
ドキュメントなし