概要（Overview）

iStar is a low energy, high current batch mode ion implanter suitable for ultra shallow junction (USJ) formation for advanced technology nodes. Its tall beam design is a breakthrough technology that achieves high beam current (2mA) at extremely low energy (100eV) without sacrificing throughput. The low energy beam current for iStar is about 2x to 4x higher than other high current implanters AIBT claimed.