説明
説明なし構成
構成なしOEMモデルの説明
The xR80 LEAP II is used for the fabrication of semiconductors using 0.18 micron and below features. It is designed to extend high current implant technology to 0.1 micron device geometries and 300mm wafer sizes. The xR80 LEAP II is a high current implanter with an energy range of 80KeV. It has a Hollow Gripper, PEEK Moving Clips, and a Bernas type ion source. It also has a standard plasma flood system and can handle gases such as BF3, PH3, and AsH3.ドキュメント
ドキュメントなし
APPLIED MATERIALS (AMAT)
xR80 LEAP II
検証済み
カテゴリ
High Current
最終検証： 60日以上前
主なアイテムの詳細
状態：
Used
稼働ステータス:
不明
製品ID：
106504
ウェーハサイズ：
8"/200mm
ヴィンテージ：
不明
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
APPLIED MATERIALS (AMAT)
xR80 LEAP II
カテゴリ
High Current
最終検証： 60日以上前
主なアイテムの詳細
状態：
Used
稼働ステータス:
不明
製品ID：
106504
ウェーハサイズ：
8"/200mm
ヴィンテージ：
不明
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
説明
説明なし構成
構成なしOEMモデルの説明
The xR80 LEAP II is used for the fabrication of semiconductors using 0.18 micron and below features. It is designed to extend high current implant technology to 0.1 micron device geometries and 300mm wafer sizes. The xR80 LEAP II is a high current implanter with an energy range of 80KeV. It has a Hollow Gripper, PEEK Moving Clips, and a Bernas type ion source. It also has a standard plasma flood system and can handle gases such as BF3, PH3, and AsH3.ドキュメント
ドキュメントなし