説明
説明なし構成
構成なしOEMモデルの説明
The SEN Corporation / Sumitomo NV-GSD-HE is a globally recognized high-energy ion implantation system designed for 200mm, 150mm, and 125mm wafers, offering exceptional productivity in the energy range of up to 3 MeV. It supports an energy range between 10 keV and 3,000 keV, providing increased acquisition energy and improved efficiency through RF acceleration using RF resonators. The system features enhanced beam current at high energy levels due to optimized mass analyzing magnet and FEM (Final Energy Magnet). For higher implantation efficiency, it offers the option of installing a CVA (Continuous Variable Aperture). The NV-GSD-HE ensures high accuracy of implantation and maintains high beam quality by minimizing metal contamination and cross-contamination. The optional VSD (Virtual Slit Disk) and TSDF (Triple Surface Disk Faraday) further reduce cross-contamination.ドキュメント
ドキュメントなし
カテゴリ
High Current
最終検証： 2日前
主なアイテムの詳細
状態：
Used
稼働ステータス:
不明
製品ID：
153263
ウェーハサイズ：
6"/150mm
ヴィンテージ：
2000
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
SEN CORPORATION / SUMITOMO
NV GSD HE
カテゴリ
High Current
最終検証： 2日前
主なアイテムの詳細
状態：
Used
稼働ステータス:
不明
製品ID：
153263
ウェーハサイズ：
6"/150mm
ヴィンテージ：
2000
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
説明
説明なし構成
構成なしOEMモデルの説明
The SEN Corporation / Sumitomo NV-GSD-HE is a globally recognized high-energy ion implantation system designed for 200mm, 150mm, and 125mm wafers, offering exceptional productivity in the energy range of up to 3 MeV. It supports an energy range between 10 keV and 3,000 keV, providing increased acquisition energy and improved efficiency through RF acceleration using RF resonators. The system features enhanced beam current at high energy levels due to optimized mass analyzing magnet and FEM (Final Energy Magnet). For higher implantation efficiency, it offers the option of installing a CVA (Continuous Variable Aperture). The NV-GSD-HE ensures high accuracy of implantation and maintains high beam quality by minimizing metal contamination and cross-contamination. The optional VSD (Virtual Slit Disk) and TSDF (Triple Surface Disk Faraday) further reduce cross-contamination.ドキュメント
ドキュメントなし