APPLIED MATERIALS (AMAT) / VARIAN VIISion 200

説明

Connection top/bottom - top Details Attached

構成

Source / Beamline: Source - I.H.C Vaporizer Option - No Source Chamber Shield Kit - yes IBS Xtensy Source - yes Mass Slit Shield Retrofit - no Gasbox: String #1 - SDS - MKS-P2A -- 10scccm String #2 - SDS - Unit-1662 -- 10scccm String #3 - HP - Unit-1201A -- 10sccm String #4 - HP - Unit-1201A -- 10sccm External Inert Gas Feed and Purge Endstation: Implant Disc - 13 Site, Silicon Coated New Infranor Amplifier Xtra Puls - yes Spin Amp Kollmorgen - Servo Star S670 2 dimensional Profiler - yes Control System: Computer - 147MHz Main & ES CPU Software Ver - 6.24 Backup Disc - Floppy Drive Cleanroom Monitor - TFT Remote Monitor - TFT Light Tower - Yes High Vac Pumps: Source Turbo - Pfeiffer 1500 (Pump maybe not included, depends on decon posibility) Beamline Turbo - Pfeiffer 1200 (Pump maybe not included, depends on decon posibility) Manifold Turbo - Pfeiffer Endstation Cryo P1 - CTI 250F P/N: 8039113 (Pump maybe not included, depends on decon posibility) Endstation Cryo P2 - CTI 250F P/N: 8039113 (Pump maybe not included, depends on decon posibility) Endstation Cryo P3 - CTI 250F P/N: 8039113 (Pump maybe not included, depends on decon posibility) Endstation Cryo P5 - CTI 250F P/N: 8039113 (Pump maybe not included, depends on decon posibility) Dry Roughing Pumps: Terminal Differential Seal - Membran Endstation Differential Pump - Membran or Scroll Pump Remote Facility Rack: Cryo Comp 1 - 9600LV Cryo Comp 2 - 9600LV 50 Hz Frequency Converter - yes Spare Assys: Source - I.H.C Extency Source

OEMモデルの説明

The VIISion 200 is a high current ion implantation system that autotunes and implants high doses with high beam currents for improved throughput. The design of the ion optics allows low energy implants in drift mode. When implanting with high currents, a plasma flood gun system is used to prevent wafer charging problems. The beam line design incorporates a number of significant features to enhance the generation and transport of ion beams with high efficiencies and minimal heavy metals and particle production. These include a dual filament ion source, a constant current extraction system with variable z axis and suppression voltage, a very high resolving power high acceptance mass analysis system, a rotating mass defining slit, a variable gap acceleration system and a full faraday in front of the wafer.