説明
AMAT Viista HCP implanter Part # E19291140 Part Description: Extraction Power Supply 80kv構成
AMAT Viista HCP implanter Part # E19291140 Part Description: Extraction Power Supply 80kvOEMモデルの説明
The VIISta HCP series is a high current single wafer ion implanter that offers high productivity and excellent contamination performance. It features implant angle accuracy, beam steering correction, and high-tilt angle capability, making it suitable for advanced device fabrication. With its excellent process control capability, the VIISta HCP is ideal for advanced ultra shallow junction applications such as source/drain, source/drain extension, gate doping, pre-amorphization, and materials modification. It has an energy range of 200 eV to 60 keV and a dose range of 1 x 10^13 to 5 x 10^16 ions/cm^-2.ドキュメント
ドキュメントなし
APPLIED MATERIALS (AMAT) / VARIAN
VIISta HCP
検証済み
カテゴリ
High Current
最終検証： 60日以上前
主なアイテムの詳細
状態：
Parts Tool
稼働ステータス:
Deinstalled
製品ID：
94077
ウェーハサイズ：
不明
ヴィンテージ：
不明
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
APPLIED MATERIALS (AMAT) / VARIAN
VIISta HCP
カテゴリ
High Current
最終検証： 60日以上前
主なアイテムの詳細
状態：
Parts Tool
稼働ステータス:
Deinstalled
製品ID：
94077
ウェーハサイズ：
不明
ヴィンテージ：
不明
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
説明
AMAT Viista HCP implanter Part # E19291140 Part Description: Extraction Power Supply 80kv構成
AMAT Viista HCP implanter Part # E19291140 Part Description: Extraction Power Supply 80kvOEMモデルの説明
The VIISta HCP series is a high current single wafer ion implanter that offers high productivity and excellent contamination performance. It features implant angle accuracy, beam steering correction, and high-tilt angle capability, making it suitable for advanced device fabrication. With its excellent process control capability, the VIISta HCP is ideal for advanced ultra shallow junction applications such as source/drain, source/drain extension, gate doping, pre-amorphization, and materials modification. It has an energy range of 200 eV to 60 keV and a dose range of 1 x 10^13 to 5 x 10^16 ions/cm^-2.ドキュメント
ドキュメントなし