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AXCELIS GSD HE
    説明
    説明なし
    構成
    構成なし
    OEMモデルの説明
    The GSD/HE is a high-energy implant device that is designed to maximize productivity and flexibility in a wide range of implant applications, including 200mm high energy implantation for logic and memory chips. With an energy range from 10keV to over 3MeV, it can perform all retrograde wells and channel implants in a chain. The device features exceptional beam purity, thanks to its patented linear acceleration technology, and is built on a production-proven GSD wafer-handling architecture. It is also easy to access and maintain, which helps to increase productivity and reduce the cost of ownership. Additionally, the GSD/HE can be used as a backup for medium current implantation, further increasing ROI.
    ドキュメント

    ドキュメントなし

    AXCELIS

    GSD HE

    verified-listing-icon

    検証済み

    カテゴリ
    Ion Implantation

    最終検証: 60日以上前

    主なアイテムの詳細

    状態:

    Used


    稼働ステータス:

    不明


    製品ID:

    74519


    ウェーハサイズ:

    不明


    ヴィンテージ:

    不明


    Have Additional Questions?
    Logistics Support
    Available
    Money Back Guarantee
    Available
    Transaction Insured by Moov
    Available
    Refurbishment Services
    Available
    同様のリスト
    すべて表示
    AXCELIS GSD HE

    AXCELIS

    GSD HE

    Ion Implantation
    ヴィンテージ: 0状態: 中古
    最終確認60日以上前

    AXCELIS

    GSD HE

    verified-listing-icon
    検証済み
    カテゴリ
    Ion Implantation
    最終検証: 60日以上前
    listing-photo-2e4480dfd7ae45309ab780a42177d04a-https://d2pkkbyngq3xpw.cloudfront.net/moov_media/3.0-assets/photo-coming-soon-small.png
    主なアイテムの詳細

    状態:

    Used


    稼働ステータス:

    不明


    製品ID:

    74519


    ウェーハサイズ:

    不明


    ヴィンテージ:

    不明


    Have Additional Questions?
    Logistics Support
    Available
    Money Back Guarantee
    Available
    Transaction Insured by Moov
    Available
    Refurbishment Services
    Available
    説明
    説明なし
    構成
    構成なし
    OEMモデルの説明
    The GSD/HE is a high-energy implant device that is designed to maximize productivity and flexibility in a wide range of implant applications, including 200mm high energy implantation for logic and memory chips. With an energy range from 10keV to over 3MeV, it can perform all retrograde wells and channel implants in a chain. The device features exceptional beam purity, thanks to its patented linear acceleration technology, and is built on a production-proven GSD wafer-handling architecture. It is also easy to access and maintain, which helps to increase productivity and reduce the cost of ownership. Additionally, the GSD/HE can be used as a backup for medium current implantation, further increasing ROI.
    ドキュメント

    ドキュメントなし

    同様のリスト
    すべて表示
    AXCELIS GSD HE

    AXCELIS

    GSD HE

    Ion Implantationヴィンテージ: 0状態: 中古最終検証:60日以上前
    AXCELIS GSD HE

    AXCELIS

    GSD HE

    Ion Implantationヴィンテージ: 0状態: 中古最終検証:60日以上前