説明
process 1ch構成
ID_HiEnrgOEMモデルの説明
High energy implanter. processing 300-mm wafers, the HE3 produces higher ion energies than the GSD/HE in a package that incorporates higher efficiency linear accelerator technology. The system layout has also been optimized so that footprint is reduced compared to the GSD/VHE while maintaining the same twin well and triple well process capability. A new endstation capable of batch processing 300-mm wafers, at a mechanical throughput equal to or exceeding that for 200-mm wafers in the GSD/HE system, has been developed.ドキュメント
ドキュメントなし
カテゴリ
Ion Implantation
最終検証： 12日前
主なアイテムの詳細
状態：
Used
稼働ステータス:
不明
製品ID：
144810
ウェーハサイズ：
12"/300mm
ヴィンテージ：
2024
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
AXCELIS
NV GSD HE3
カテゴリ
Ion Implantation
最終検証： 12日前
主なアイテムの詳細
状態：
Used
稼働ステータス:
不明
製品ID：
144810
ウェーハサイズ：
12"/300mm
ヴィンテージ：
2024
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
説明
process 1ch構成
ID_HiEnrgOEMモデルの説明
High energy implanter. processing 300-mm wafers, the HE3 produces higher ion energies than the GSD/HE in a package that incorporates higher efficiency linear accelerator technology. The system layout has also been optimized so that footprint is reduced compared to the GSD/VHE while maintaining the same twin well and triple well process capability. A new endstation capable of batch processing 300-mm wafers, at a mechanical throughput equal to or exceeding that for 200-mm wafers in the GSD/HE system, has been developed.ドキュメント
ドキュメントなし