説明
High-Energy Ion Implanter構成
Ion Source Assembly Mass Analyzer Magnet RF Linear Accelerator (Multi-Stage RF Resonant Cavities) Wafer Processing Station Power Distribution Rack Vacuum Measurement Control Cabinets Wafer loading interface (EFEM/load port)OEMモデルの説明
High energy implanter. processing 300-mm wafers, the HE3 produces higher ion energies than the GSD/HE in a package that incorporates higher efficiency linear accelerator technology. The system layout has also been optimized so that footprint is reduced compared to the GSD/VHE while maintaining the same twin well and triple well process capability. A new endstation capable of batch processing 300-mm wafers, at a mechanical throughput equal to or exceeding that for 200-mm wafers in the GSD/HE system, has been developed.ドキュメント
ドキュメントなし
カテゴリ
Ion Implantation
最終検証： 2日前
主なアイテムの詳細
状態：
Used
稼働ステータス:
不明
製品ID：
158121
ウェーハサイズ：
不明
ヴィンテージ：
2015
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
同様のリスト
すべて表示
AXCELIS
NV GSD HE3
カテゴリ
Ion Implantation
最終検証： 2日前
主なアイテムの詳細
状態：
Used
稼働ステータス:
不明
製品ID：
158121
ウェーハサイズ：
不明
ヴィンテージ：
2015
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
説明
High-Energy Ion Implanter構成
Ion Source Assembly Mass Analyzer Magnet RF Linear Accelerator (Multi-Stage RF Resonant Cavities) Wafer Processing Station Power Distribution Rack Vacuum Measurement Control Cabinets Wafer loading interface (EFEM/load port)OEMモデルの説明
High energy implanter. processing 300-mm wafers, the HE3 produces higher ion energies than the GSD/HE in a package that incorporates higher efficiency linear accelerator technology. The system layout has also been optimized so that footprint is reduced compared to the GSD/VHE while maintaining the same twin well and triple well process capability. A new endstation capable of batch processing 300-mm wafers, at a mechanical throughput equal to or exceeding that for 200-mm wafers in the GSD/HE system, has been developed.ドキュメント
ドキュメントなし