説明
High Dose Implant構成
構成なしOEMモデルの説明
The VIISta PLAD is a multi-chamber tool built on a platform common with Varian Semiconductor’s VIISta family of implanters, the only truly complete platform available that covers all implant segments. The VIISta PLAD implants the entire wafer simultaneously by positioning the wafer directly in a chamber containing plasma of the desired species. A pulsed DC voltage applied to the wafer draws ions from the plasma at a precisely controlled energy, resulting in extremely fast high-dose implants. Pulsing the bias voltage allows the system to automatically neutralize any charge buildup on the wafer surface between pulses and measure the ion dose per pulse using a Faraday for closed-loop in-situ dose control. With throughput up to six times greater than beamline or modified-source beamline technologies, the VIISta PLAD has become an attractive solution for critical low-energy, high-dose applications, such as DRAM (dynamic random access memory) polysilicon gate doping.ドキュメント
ドキュメントなし
APPLIED MATERIALS (AMAT) / VARIAN
VIISta PLAD
検証済み
カテゴリ
Ion Implantation
主なアイテムの詳細
状態：
Used
稼働ステータス:
不明
製品ID：
91748
ウェーハサイズ：
12"/300mm
ヴィンテージ：
不明
Have Additional Questions?
Logistics Support
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Money Back Guarantee
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Transaction Insured by Moov
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Refurbishment Services
Available
APPLIED MATERIALS (AMAT) / VARIAN
VIISta PLAD
検証済み
カテゴリ
Ion Implantation
最終検証： 29日前
主なアイテムの詳細
状態：
Used
稼働ステータス:
不明
製品ID：
91748
ウェーハサイズ：
12"/300mm
ヴィンテージ：
不明
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
説明
High Dose Implant構成
構成なしOEMモデルの説明
The VIISta PLAD is a multi-chamber tool built on a platform common with Varian Semiconductor’s VIISta family of implanters, the only truly complete platform available that covers all implant segments. The VIISta PLAD implants the entire wafer simultaneously by positioning the wafer directly in a chamber containing plasma of the desired species. A pulsed DC voltage applied to the wafer draws ions from the plasma at a precisely controlled energy, resulting in extremely fast high-dose implants. Pulsing the bias voltage allows the system to automatically neutralize any charge buildup on the wafer surface between pulses and measure the ion dose per pulse using a Faraday for closed-loop in-situ dose control. With throughput up to six times greater than beamline or modified-source beamline technologies, the VIISta PLAD has become an attractive solution for critical low-energy, high-dose applications, such as DRAM (dynamic random access memory) polysilicon gate doping.ドキュメント
ドキュメントなし