説明
Tool capable of Pt, Au, Ta, Ti, Al, TiW, oxide/ nitride dielectric etching Etch rate of >500A/ min 200 mm Wafer size , Variable wafer thickness (of 300 um to 1200 um) . SECS/ GEM communication Tool Must have e-beam neutralizer ( to avoid surface charging) Tool must have N2, He, Ar, MFC, (O2 MFC if reactive + Ion beam etching is available) Tilt and rotation control of substrate ( Sub Holder) Etch Non-uniformity of 3% or better ( expected 2%)-1 Sig Excellent chuck cooling ( Helium cooling preferred), no resist burning Multi stage cryo, or Turbo pump for chamber pump down, capable of pumping down to 1 X 10E-7 or lower Load lock process and automated handler - Single End point detection ( Optical or SIMS, nice to have)-Optional構成
構成なしOEMモデルの説明
The RF-350 is an automatic, single-substrate, loadlocked production system that uses a 300mm diameter, inductively coupled ion source for large substrates. It is similar to the RF-210 in that it provides excellent uniformity from its inductively-coupled, highly-collimated, filamentless, RF ion source during RIBE or ion milling. The RF-350 offers maximized process flexibility due to its reactive gas capabilities and independent control of ion beam parameters and ion incident angle. Additionally, its modular design allows for a seamless and cost-effective upgrade from single substrate, loadlock processing to cassette-to-cassette loading. This makes the RF-350 a versatile and efficient tool for substrate processing.ドキュメント
ドキュメントなし
VEECO
RF-350
検証済み
カテゴリ
Ion Milling
最終検証： 14日前
主なアイテムの詳細
状態：
Used
稼働ステータス:
Installed / Running
製品ID：
111937
ウェーハサイズ：
不明
ヴィンテージ：
不明
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
VEECO
RF-350
カテゴリ
Ion Milling
最終検証： 14日前
主なアイテムの詳細
状態：
Used
稼働ステータス:
Installed / Running
製品ID：
111937
ウェーハサイズ：
不明
ヴィンテージ：
不明
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
説明
Tool capable of Pt, Au, Ta, Ti, Al, TiW, oxide/ nitride dielectric etching Etch rate of >500A/ min 200 mm Wafer size , Variable wafer thickness (of 300 um to 1200 um) . SECS/ GEM communication Tool Must have e-beam neutralizer ( to avoid surface charging) Tool must have N2, He, Ar, MFC, (O2 MFC if reactive + Ion beam etching is available) Tilt and rotation control of substrate ( Sub Holder) Etch Non-uniformity of 3% or better ( expected 2%)-1 Sig Excellent chuck cooling ( Helium cooling preferred), no resist burning Multi stage cryo, or Turbo pump for chamber pump down, capable of pumping down to 1 X 10E-7 or lower Load lock process and automated handler - Single End point detection ( Optical or SIMS, nice to have)-Optional構成
構成なしOEMモデルの説明
The RF-350 is an automatic, single-substrate, loadlocked production system that uses a 300mm diameter, inductively coupled ion source for large substrates. It is similar to the RF-210 in that it provides excellent uniformity from its inductively-coupled, highly-collimated, filamentless, RF ion source during RIBE or ion milling. The RF-350 offers maximized process flexibility due to its reactive gas capabilities and independent control of ion beam parameters and ion incident angle. Additionally, its modular design allows for a seamless and cost-effective upgrade from single substrate, loadlock processing to cassette-to-cassette loading. This makes the RF-350 a versatile and efficient tool for substrate processing.ドキュメント
ドキュメントなし