説明
説明なし構成
- 8X6 Configuration - Heated exhaust from chamber to filter assembly - Dual filter assembly Inverted and Phoniex filter - VAT Throttle Valve - Extra Pressure sensors for both exhaust streams (Hydride and CL2) - Internal scrubber switching - EPITT Version 2 - EPISON on Dopant MO line plus heating from bubbler to Run/Vent line - Ebara ESA100WN process pump - Two Triscroll pumps: for glovebox and Antechamber - Aixact version 7.6..2.1 - Process module 208VAC, RF Generator 480VAC - No transfer modulesOEMモデルの説明
The G5 series reactors typically feature AIXTRON's Planetary Reactor technology, which allows for high-quality, uniform growth of films. This is achieved by rotating the substrate wafers around a central point, similar to the planets orbiting the sun, while gases are injected into the chamber.ドキュメント
ドキュメントなし
AIXTRON
AIX G5
検証済み
カテゴリ
MOCVD
最終検証： 4日前
主なアイテムの詳細
状態：
Used
稼働ステータス:
不明
製品ID：
117155
ウェーハサイズ：
不明
ヴィンテージ：
2014
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
AIXTRON
AIX G5
カテゴリ
MOCVD
最終検証： 4日前
主なアイテムの詳細
状態：
Used
稼働ステータス:
不明
製品ID：
117155
ウェーハサイズ：
不明
ヴィンテージ：
2014
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
説明
説明なし構成
- 8X6 Configuration - Heated exhaust from chamber to filter assembly - Dual filter assembly Inverted and Phoniex filter - VAT Throttle Valve - Extra Pressure sensors for both exhaust streams (Hydride and CL2) - Internal scrubber switching - EPITT Version 2 - EPISON on Dopant MO line plus heating from bubbler to Run/Vent line - Ebara ESA100WN process pump - Two Triscroll pumps: for glovebox and Antechamber - Aixact version 7.6..2.1 - Process module 208VAC, RF Generator 480VAC - No transfer modulesOEMモデルの説明
The G5 series reactors typically feature AIXTRON's Planetary Reactor technology, which allows for high-quality, uniform growth of films. This is achieved by rotating the substrate wafers around a central point, similar to the planets orbiting the sun, while gases are injected into the chamber.ドキュメント
ドキュメントなし