説明
説明なし構成
Configured for InP System equipped with EpiTT Hydride/Dopant Lines : NH3 × 2, Si2H6 x 1 (with dilution), Si2H6 x 1 MO Source Lines : TMGa-1, TMGa-2, TEGa-1,TEGa-2, TMAI-1, Cp2Mg- 1, Cp2Mg-2, TMIn-1, TMIn-2. Equipped with (4) RM 6S and (2) RM 25S thermal bathsOEMモデルの説明
The AIXTRON AIX 2800 G4 HT (High-Temperature) is an advanced metal-organic chemical vapor deposition (MOCVD) system developed by AIXTRON SE. It is designed specifically for high-temperature processing and the epitaxial growth of compound semiconductor materials.ドキュメント
ドキュメントなし
AIXTRON
AIX 2800 G4 HT
検証済み
カテゴリ
MOCVD
最終検証: 60日以上前
主なアイテムの詳細
状態:
Used
稼働ステータス:
Deinstalled
製品ID:
99356
ウェーハサイズ:
不明
ヴィンテージ:
2010
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
同様のリスト
すべて表示AIXTRON
AIX 2800 G4 HT
カテゴリ
MOCVD
最終検証: 60日以上前
主なアイテムの詳細
状態:
Used
稼働ステータス:
Deinstalled
製品ID:
99356
ウェーハサイズ:
不明
ヴィンテージ:
2010
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
説明
説明なし構成
Configured for InP System equipped with EpiTT Hydride/Dopant Lines : NH3 × 2, Si2H6 x 1 (with dilution), Si2H6 x 1 MO Source Lines : TMGa-1, TMGa-2, TEGa-1,TEGa-2, TMAI-1, Cp2Mg- 1, Cp2Mg-2, TMIn-1, TMIn-2. Equipped with (4) RM 6S and (2) RM 25S thermal bathsOEMモデルの説明
The AIXTRON AIX 2800 G4 HT (High-Temperature) is an advanced metal-organic chemical vapor deposition (MOCVD) system developed by AIXTRON SE. It is designed specifically for high-temperature processing and the epitaxial growth of compound semiconductor materials.ドキュメント
ドキュメントなし