説明
System with EFEM構成
GaN MOCVDOEMモデルの説明
Veeco’s Propel™ MOCVD system is designed as a flexible platform for early stage research and development and small production needs for nitride applications. The reactor is capable of processing 9×2”, 3×4”, 1×6” and 1×8” on various substrates such as silicon, sapphire and silicon carbide without any hardware modification between runs.The system deposits high-quality GaN films for multiple applications such as power, RF, & photonics. The R200 reactor is based on Veeco’s leading TurboDisc® design including the IsoFlange™ and SymmHeat™ technologies that provide laminar flow and uniform temperature profile across the entire wafer. Customers can easily transfer processes from Veeco D180, K465i™ or MaxBright™ systems to the Propel GaN MOCVD platform.ドキュメント
ドキュメントなし
VEECO
Propel
カテゴリ
MOCVD
最終検証： 14日前
主なアイテムの詳細
状態：
Used
稼働ステータス:
不明
製品ID：
146156
ウェーハサイズ：
12"/300mm
ヴィンテージ：
2020
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
説明
System with EFEM構成
GaN MOCVDOEMモデルの説明
Veeco’s Propel™ MOCVD system is designed as a flexible platform for early stage research and development and small production needs for nitride applications. The reactor is capable of processing 9×2”, 3×4”, 1×6” and 1×8” on various substrates such as silicon, sapphire and silicon carbide without any hardware modification between runs.The system deposits high-quality GaN films for multiple applications such as power, RF, & photonics. The R200 reactor is based on Veeco’s leading TurboDisc® design including the IsoFlange™ and SymmHeat™ technologies that provide laminar flow and uniform temperature profile across the entire wafer. Customers can easily transfer processes from Veeco D180, K465i™ or MaxBright™ systems to the Propel GaN MOCVD platform.ドキュメント
ドキュメントなし