説明
説明なし構成
Manual Loading / up to an 8" round substrate x 1.2" deep. (9.5" x 9.5" x 1") Typical Capacity: Can accommodate die or special devices through manual loading Chamber is 4",6",8" compatible Up to three (3) 8" wafers with a special holder Up to three (3) 6" wafers with a special holder (Heated) (0-10torr) Fully Integrated Inductively Coupled Downstream Plasma Source for surface modification and cleaning Includes Gate Valve Isolation of Plasma Source Electronic Mass Flow Controller for Plasma Source gas control - Oxygen 13.56MHzOEMモデルの説明
Molecular Vapor Deposition Systemドキュメント
ドキュメントなし
SPTS / APPLIED MICROSTRUCTURES
MVD 100
検証済み
カテゴリ
MVD
最終検証： 60日以上前
主なアイテムの詳細
状態：
Used
稼働ステータス:
不明
製品ID：
101796
ウェーハサイズ：
不明
ヴィンテージ：
不明
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
SPTS / APPLIED MICROSTRUCTURES
MVD 100
カテゴリ
MVD
最終検証： 60日以上前
主なアイテムの詳細
状態：
Used
稼働ステータス:
不明
製品ID：
101796
ウェーハサイズ：
不明
ヴィンテージ：
不明
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
説明
説明なし構成
Manual Loading / up to an 8" round substrate x 1.2" deep. (9.5" x 9.5" x 1") Typical Capacity: Can accommodate die or special devices through manual loading Chamber is 4",6",8" compatible Up to three (3) 8" wafers with a special holder Up to three (3) 6" wafers with a special holder (Heated) (0-10torr) Fully Integrated Inductively Coupled Downstream Plasma Source for surface modification and cleaning Includes Gate Valve Isolation of Plasma Source Electronic Mass Flow Controller for Plasma Source gas control - Oxygen 13.56MHzOEMモデルの説明
Molecular Vapor Deposition Systemドキュメント
ドキュメントなし