説明
3 chambers, No HDD構成
構成なしOEMモデルの説明
The AMAT Centura DxZ is an advanced chemical vapor deposition (CVD) system tailored for advanced CMOS and MtM applications in the semiconductor industry, focusing on 150mm and 200mm wafer sizes. It excels in depositing ultra-thick oxides (≥20µm) and enables low-temperature processing (<200°C), making it ideal for high-performance devices. With its ability to produce conformal, low wet-etch-rate films and doped films with tunable refractive indices, the Centura DxZ offers versatility to meet diverse manufacturing demands. Its broad portfolio of processes includes TEOS, silane-based oxides, nitrides, low-k dielectrics, strain-engineered films, and litho-enabling films, providing semiconductor manufacturers with a comprehensive solution for optimal performance and efficiency in production processes.ドキュメント
ドキュメントなし
APPLIED MATERIALS (AMAT)
CENTURA DxZ
検証済み
カテゴリ
PECVD
最終検証： 60日以上前
主なアイテムの詳細
状態：
Used
稼働ステータス:
不明
製品ID：
101586
ウェーハサイズ：
不明
ヴィンテージ：
不明
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
同様のリスト
すべて表示
APPLIED MATERIALS (AMAT)
CENTURA DxZ
カテゴリ
PECVD
最終検証： 60日以上前
主なアイテムの詳細
状態：
Used
稼働ステータス:
不明
製品ID：
101586
ウェーハサイズ：
不明
ヴィンテージ：
不明
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
説明
3 chambers, No HDD構成
構成なしOEMモデルの説明
The AMAT Centura DxZ is an advanced chemical vapor deposition (CVD) system tailored for advanced CMOS and MtM applications in the semiconductor industry, focusing on 150mm and 200mm wafer sizes. It excels in depositing ultra-thick oxides (≥20µm) and enables low-temperature processing (<200°C), making it ideal for high-performance devices. With its ability to produce conformal, low wet-etch-rate films and doped films with tunable refractive indices, the Centura DxZ offers versatility to meet diverse manufacturing demands. Its broad portfolio of processes includes TEOS, silane-based oxides, nitrides, low-k dielectrics, strain-engineered films, and litho-enabling films, providing semiconductor manufacturers with a comprehensive solution for optimal performance and efficiency in production processes.ドキュメント
ドキュメントなし