説明
Composition: Main Frame, AC Rack, Pump 2 (L/L, Ch.), ILDS Old Gen (HF, LF 2) * Gen Maker not confirmed HF ENI is possible, but currently KF is using RFG5500 Chamber: Chamber interior not confirmed Spindle worm gear (Type 1) modification difficult to modify to Type 2 Heater and all process kits cannot be used構成
OXY_NITOEMモデルの説明
The Novellus Concept-One is a PECVD tool that uses plasma-enhanced chemical vapor deposition to deposit various dielectric films on silicon wafers. It can deposit oxide, nitride, oxynitride, PSG and TEOS oxide films. The Concept1 is also a PECVD tool that deposits dielectric films on 6" wafers. It is capable of depositing thick films in excess of 1 um and allows CMOS compatible metals, making it suitable for backend processes. The system deposits on multiple wafers in parallel in a batch-type reactor.ドキュメント
ドキュメントなし
LAM RESEARCH / NOVELLUS
CONCEPT ONE "C1"
検証済み
カテゴリ
PECVD
最終検証: 60日以上前
主なアイテムの詳細
状態:
Used
稼働ステータス:
不明
製品ID:
92119
ウェーハサイズ:
不明
ヴィンテージ:
不明
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
同様のリスト
すべて表示LAM RESEARCH / NOVELLUS
CONCEPT ONE "C1"
カテゴリ
PECVD
最終検証: 60日以上前
主なアイテムの詳細
状態:
Used
稼働ステータス:
不明
製品ID:
92119
ウェーハサイズ:
不明
ヴィンテージ:
不明
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
説明
Composition: Main Frame, AC Rack, Pump 2 (L/L, Ch.), ILDS Old Gen (HF, LF 2) * Gen Maker not confirmed HF ENI is possible, but currently KF is using RFG5500 Chamber: Chamber interior not confirmed Spindle worm gear (Type 1) modification difficult to modify to Type 2 Heater and all process kits cannot be used構成
OXY_NITOEMモデルの説明
The Novellus Concept-One is a PECVD tool that uses plasma-enhanced chemical vapor deposition to deposit various dielectric films on silicon wafers. It can deposit oxide, nitride, oxynitride, PSG and TEOS oxide films. The Concept1 is also a PECVD tool that deposits dielectric films on 6" wafers. It is capable of depositing thick films in excess of 1 um and allows CMOS compatible metals, making it suitable for backend processes. The system deposits on multiple wafers in parallel in a batch-type reactor.ドキュメント
ドキュメントなし