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MICROSYSTEMS MICROSYS 200
  • MICROSYSTEMS MICROSYS 200
  • MICROSYSTEMS MICROSYS 200
  • MICROSYSTEMS MICROSYS 200
  • MICROSYSTEMS MICROSYS 200
説明
説明なし
構成
Plasma Enhanced CVD system (PECVD) Deposition of SiO2, Si3N4 and a-Si RF power: 0-400 W ICP power: 0-1300 W Temperatures: RT to 300°C Gases available: Ar, SiH4, NH3, N2, O2, NF3, N2O He for substrate heat transfer Maximum wafer size: 4"
OEMモデルの説明
Plasma Enhanced CVD system (PECVD)
ドキュメント

ドキュメントなし

カテゴリ
PECVD

最終検証: 60日以上前

主なアイテムの詳細

状態:

Used


稼働ステータス:

不明


製品ID:

97600


ウェーハサイズ:

4"/100mm


ヴィンテージ:

不明


Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available

MICROSYSTEMS

MICROSYS 200

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検証済み
カテゴリ
PECVD
最終検証: 60日以上前
listing-photo-4469181d504148778026584238b8b97a-https://media-moov-co.s3.us-west-1.amazonaws.com/user_media/listingPhoto/54225/4469181d504148778026584238b8b97a/eb6f5554ff2445c59ba4a1ecac66a231_a98d6d42000c41e1868d340e6ab13fa81201a_mw.jpeg
listing-photo-4469181d504148778026584238b8b97a-https://media-moov-co.s3.us-west-1.amazonaws.com/user_media/listingPhoto/54225/4469181d504148778026584238b8b97a/a7dad8ae332047688913ba9be4095027_55ace7ffdc6348bbb26b863ef47e085f_mw.jpeg
listing-photo-4469181d504148778026584238b8b97a-https://media-moov-co.s3.us-west-1.amazonaws.com/user_media/listingPhoto/54225/4469181d504148778026584238b8b97a/0b3a9013ef20494ab11c5c358d32232a_3227b227de3a4f37ba9f4ee5d2a36ca21201a_mw.jpeg
listing-photo-4469181d504148778026584238b8b97a-https://media-moov-co.s3.us-west-1.amazonaws.com/user_media/listingPhoto/54225/4469181d504148778026584238b8b97a/157a70c16b514a92bff0673bd9d36271_675890a773c547bb9961d01cf0f442a71201a_mw.jpeg
主なアイテムの詳細

状態:

Used


稼働ステータス:

不明


製品ID:

97600


ウェーハサイズ:

4"/100mm


ヴィンテージ:

不明


Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
説明
説明なし
構成
Plasma Enhanced CVD system (PECVD) Deposition of SiO2, Si3N4 and a-Si RF power: 0-400 W ICP power: 0-1300 W Temperatures: RT to 300°C Gases available: Ar, SiH4, NH3, N2, O2, NF3, N2O He for substrate heat transfer Maximum wafer size: 4"
OEMモデルの説明
Plasma Enhanced CVD system (PECVD)
ドキュメント

ドキュメントなし