説明

Single Wafer Processing

構成

Process: BACKETCH Tool config is based on original PO, please verify tool details at tool inspection FID: 157426 Tool S/N: E14 Reference Tool S/N: E6 EOS Product Type EOS Front Section ES EOS Rear Section ES Front End Load Port: 4 FOUP TDK Carrier ID: Brooks Carrier ID reader Factory Automation: OHT PIO Sensor User Interface Options: Side Only (Ballroom) Signal Tower: R-O-G-B Silm Line Handling system: Standard Handling Process Module Ionization: PM Ionixation 16 chamber Platform Doors: Door with Windows Okatform Lights: Wite LEDs Number of Power Supply Lines: 2 Supply Feed System Power Supply: 208V and 480V 50/60 Hz Interconnect Com. Cables: 30m Cab;es to Subpanel PC Power supply: Internal UPS Fire Suppression Front Section & Rear Section EOS ES Media#1 Chemistry 1: dHF (supply to TL) Chemistry 1 Dispense: double side dispense Chemistry 1 Dispense mode: Drain & recirculation Chemistry 1 Preparation: 2 Chemical Mix (High Flow) NSR Chemical 1 Temperature Mixing: Not Present: Local NSR Chemistry 1 Life Time Exp.: Top-up Chem. 1 Temp. Specification: 24-40C Chemical 1 Filter Preparation: Filter Housing Chem. 1 Gilter Catridge: Filter Pore Size 20nm Internal Chemical 1 AnalyzersL Horiba HF-960M External Chemical 1 Analyzers: Not present Chem 1 Analyzer Saple collerL Not Present EOS ES Media#2 Chemistry 2: Not present EOS ES Media#3 Chemistry 3: Not present EOS ES PM Chuck: DS Chuck (Std. & Solb. less than 60C) Drying: ASD3+ IPA Options: Standard IPA Filter Cartridge: Lam Spplied IPA Filter Partical Removal Options: A-Jet (DI/CO2) Drain Separation (Rinse Level): 3 Media Level 3- Drain#1: Rinse Medua (DI) Level 3- Drain#2: IPA- High Concentration Level 30 Drain#3: IPA- Low Concentration Exhaust Separation: BB-L1 & L2-Exh. 1, Le-Exh1,2 Media 1 Dispense Single Nozzle Media 2 Dispense: Single Nozzle OptionsL Continuos Wet Wafer Damage/Missing parts list Please inspect tool to reconfirm