説明
説明なし構成
構成なしOEMモデルの説明
Model N-6000, which was co-developed by Renesas Technology Corp. and Hitachi, Ltd., has six tungsten manipulation-probes mounted on SEM (scanning electron microscope), each of which has a point with a 50-nm radius. Manipulation-probes on Model N-6000 can directly touch the contacts that lead to components of transistors: source, drain, gate, substrate, etc. Model N-6000 can directly measure metal-oxide semiconductor characteristics, like small current leaks, threshold voltage shifts, contact resistances, etc. Model N-6000 makes a bridge between logical electrical characterization and physical characterization, and helps failure locations to be identified. It dramatically improves the efficiency of failure analysis.ドキュメント
ドキュメントなし
HITACHI
N-6000
検証済み
カテゴリ
Probers
主なアイテムの詳細
状態：
Used
稼働ステータス:
不明
製品ID：
74301
ウェーハサイズ：
不明
ヴィンテージ：
不明
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
HITACHI
N-6000
検証済み
カテゴリ
Probers
最終検証： 11日前
主なアイテムの詳細
状態：
Used
稼働ステータス:
不明
製品ID：
74301
ウェーハサイズ：
不明
ヴィンテージ：
不明
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
説明
説明なし構成
構成なしOEMモデルの説明
Model N-6000, which was co-developed by Renesas Technology Corp. and Hitachi, Ltd., has six tungsten manipulation-probes mounted on SEM (scanning electron microscope), each of which has a point with a 50-nm radius. Manipulation-probes on Model N-6000 can directly touch the contacts that lead to components of transistors: source, drain, gate, substrate, etc. Model N-6000 can directly measure metal-oxide semiconductor characteristics, like small current leaks, threshold voltage shifts, contact resistances, etc. Model N-6000 makes a bridge between logical electrical characterization and physical characterization, and helps failure locations to be identified. It dramatically improves the efficiency of failure analysis.ドキュメント
ドキュメントなし