説明

System Specs: • System is optimized to deposit transparent conductive oxides (TCO) specifically ITO. • System includes one process station for traditional metal deposition (configured for Al) • The SIV 500 can process substrates that fit on 500 x 500 mm carriers. • System uses side sputter technique to minimize particle generation. Carriers are set on edge with the cathodes and targets perpendicular to the floor • System utilizes a L/L and a vacuum system with 12” conductance to quickly achieve a low base and crossover pressure, increasing throughput • The process module features a pump stack with a 12” turbo/water pump and a cryo pump. • System uses process cooling water to keep the cathode/targets, pumps and power supplies at a constant temperature. • System uses both a pulsed DC and Rf magnetron. The magnets are driven by a worm drive mechanism that allows various speeds to evenly distribute the magnetic field. Advantages of both Pulsed DC and Rf Magnetron Design: • ITO deposition requires pulsed DC or Rf magnetron sputtering to prevent charge build-up and arcing at the target. While DC delivers excellent film quality (especially for large substrates) it can be unstable at startup and must be slowly ramped. RF provides a stable plasma and enables faster, higher-power DC ramping without arcing. It also cracks O₂ to maintain precise ITO stoichiometry for optical performance. • Unmatched flexibility for advanced ITO process development Coupling DC and Rf magnetron enables a stable plasma ignition (Rf) and low-arc reactive sputtering across a wide range of pulsed (DC) ITO process conditions • Enhanced uniformity and extended target life The SIV-500’s moving magnetron, driven by a precision worm-drive mechanism, sweeps the erosion zone across the target surface. This minimizes localized wear and nodule formation while delivering highly uniform ITO films over large substrates.

構成

• 3-station process module (P1. P2. P3) • 5 KW pulsed DC power supply • P3 dedicated to ITO or other Transparent Conductive Films <TCF) • P3 has 02 MFC & 13.56 MHz power supply/match to maintain ITO stoichiometry • L/L: has a roughing pump and water pump • Process chamber has a roughing pump. ·red to a turbo/water pump & a cryo pump SIV 500 - Manual load. (1) 500mm x 500mm carrier - Uses Ulvac 12· cryo & 12' water pump/turbo Details Attached