説明
説明なし構成
Mark II Sput Etch Chamber (chamber only) Process Kits: – 0020-10518 Pedestal – 3690-01364 Graphite Ring – 0200-09086 Pedestal QTZ Ring – 0020-09933 GDP Anodized Aluminum Turbo : Seiko-Seiki Edwards STP301CVB Match Box: 0010-09416OEMモデルの説明
The AMAT P5000 Etch is a magnetically enhanced reactive ion etching system (MERIE) with two functional process chambers (Chambers B & C). P5000 Chamber B is primarily used for etching silicon based dielectrics (silicon dioxide, silcon nitride, etc.) and some carbon based compounds (resist, poly imide, etc) while chamber C is mainly used for silicon etching with high selectivity to underlying dielectric such as silicon dioxide. The system can process only 4" wafers. Pieces have to be attached to a 4" wafer. Though the process chamber processes one wafer at a time, up to 25 wafers can be loaded per batch.ドキュメント
ドキュメントなし
APPLIED MATERIALS (AMAT)
P5000 ETCH
検証済み
カテゴリ
RIE
主なアイテムの詳細
状態：
Used
稼働ステータス:
不明
製品ID：
68081
ウェーハサイズ：
不明
ヴィンテージ：
不明
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
同様のリスト
すべて表示
APPLIED MATERIALS (AMAT)
P5000 ETCH
検証済み
カテゴリ
RIE
最終検証： 30日以上前
主なアイテムの詳細
状態：
Used
稼働ステータス:
不明
製品ID：
68081
ウェーハサイズ：
不明
ヴィンテージ：
不明
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
説明
説明なし構成
Mark II Sput Etch Chamber (chamber only) Process Kits: – 0020-10518 Pedestal – 3690-01364 Graphite Ring – 0200-09086 Pedestal QTZ Ring – 0020-09933 GDP Anodized Aluminum Turbo : Seiko-Seiki Edwards STP301CVB Match Box: 0010-09416OEMモデルの説明
The AMAT P5000 Etch is a magnetically enhanced reactive ion etching system (MERIE) with two functional process chambers (Chambers B & C). P5000 Chamber B is primarily used for etching silicon based dielectrics (silicon dioxide, silcon nitride, etc.) and some carbon based compounds (resist, poly imide, etc) while chamber C is mainly used for silicon etching with high selectivity to underlying dielectric such as silicon dioxide. The system can process only 4" wafers. Pieces have to be attached to a 4" wafer. Though the process chamber processes one wafer at a time, up to 25 wafers can be loaded per batch.ドキュメント
ドキュメントなし