説明
説明なし構成
RTPOEMモデルの説明
The Millios is based on proprietary water-wall argon arc lamp technology. The system design monitors and controls wafer front-side and backside temperature in real time. The system has excellent wafer temperature control capabilities, including unique millisecond anneal pulse duration adjustment capability and integrated spike anneal-flash millisecond anneal process capability. It can meet technical requirements of millisecond anneal process and effectively manage wafer thermal stress to avoid wafer breakage issues at the same time. The Millios is the best technical solution for ultra-shallow-junction formation, high-k materials passivation and metal silicide formation processes in advanced transistor fabrication. It is also applicable for other materials surface anneal processes.ドキュメント
ドキュメントなし
MATTSON
MILLIOS
検証済み
カテゴリ
RTP/RTA
最終検証： 6日前
主なアイテムの詳細
状態：
Used
稼働ステータス:
不明
製品ID：
116708
ウェーハサイズ：
12"/300mm
ヴィンテージ：
2011
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
MATTSON
MILLIOS
カテゴリ
RTP/RTA
最終検証： 6日前
主なアイテムの詳細
状態：
Used
稼働ステータス:
不明
製品ID：
116708
ウェーハサイズ：
12"/300mm
ヴィンテージ：
2011
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
説明
説明なし構成
RTPOEMモデルの説明
The Millios is based on proprietary water-wall argon arc lamp technology. The system design monitors and controls wafer front-side and backside temperature in real time. The system has excellent wafer temperature control capabilities, including unique millisecond anneal pulse duration adjustment capability and integrated spike anneal-flash millisecond anneal process capability. It can meet technical requirements of millisecond anneal process and effectively manage wafer thermal stress to avoid wafer breakage issues at the same time. The Millios is the best technical solution for ultra-shallow-junction formation, high-k materials passivation and metal silicide formation processes in advanced transistor fabrication. It is also applicable for other materials surface anneal processes.ドキュメント
ドキュメントなし